Product Information

SGA3486Z

SGA3486Z electronic component of Qorvo

Datasheet
RF Amplifier DC-5GHz SSG 18dB NF 3.2dB SiGe

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

SGA3486Z
Qorvo

1 : USD 3.3264
10 : USD 3.0033
25 : USD 2.682
100 : USD 2.4138
250 : USD 2.1455
500 : USD 1.8773
1000 : USD 1.5555
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

SGA3486Z
Qorvo

1 : USD 2.8843
10 : USD 2.6001
25 : USD 2.3264
100 : USD 2.0948
250 : USD 1.8632
500 : USD 1.6211
1000 : USD 1.4001
3000 : USD 1.2211
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Frequency Range
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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SGA3486ZDC to 5000MHz, Cascadable SiGe HBT MMIC Ampli- fier SGA3486Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3486Z is a high performance SiGe HBT MMIC Amplifier. A Darling- High Gain: 18.0dB at ton configuration featuring one micron emitters provides high F and 1950MHz T excellent thermal performance. The heterojunction increases breakdown Cascadable 50 voltage and minimizes leakage current between junctions. Cancellation of Operates from Single Supply emitter junction non-linearities results in higher suppression of intermodu- lation products. Only two DC-blocking capacitors, a bias resistor, and an Low Thermal Resistance Package optional RF choke are required for operation. Applications Optimum Technology Matching Applied Gain & Return Loss vs. Frequency PA Driver Amplifier V = 2.9 V, I = 35 mA (Typ.) GaAs HBT D D Cellular, PCS, GSM, UMTS 24 0 GaAs MESFET IF Amplifier GAIN InGaP HBT 18 -10 Wireless Data, Satellite IRL SiGe BiCMOS 12 -20 Si BiCMOS ORL SiGe HBT 6 -30 GaAs pHEMT Si CMOS 0 -40 Si BJT 01 23 45 Frequency (GHz) GaN HEMT RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 19.0 21.0 23.0 dB 850MHz 18.0 dB 1950MHz 16.5 dB 2400MHz Output Power at 1dB Compression 12.7 dBm 850MHz 12.5 dBm 1950MHz Output Third Intercept Point 24.6 dBm 850MHz 26.9 dBm 1950MHz Bandwidth Determined by Return 5000 MHz >8dB Loss Input Return Loss 12.2 dB 1950MHz Output Return Loss 16.3 dB 1950MHz Noise Figure 3.2 dB 1950MHz Device Operating Voltage 2.6 2.9 3.2 V Device Operating Current 31 35 39 mA Thermal Resistance 97 C/W (Junction - Lead) RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS2015 1204 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 7 NOT FOR NEW DESIGNS Gain (dB) Return Loss (dB)SGA3486Z Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I)70 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Max Device Voltage (V)4 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Max RF Input Power +18 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Junction Temp (T)+150 C J The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Storage Temp +150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l D D J L TH Typical Performance at Key Operating Frequencies Parameter Unit 100 500 850 1950 2400 3500 MHz MHz MHz MHz MHz MHz Small Signal Gain dB 23.2 22.4 21.0 18.0 16.5 14.2 Output Third Order Intercept Point dBm 25.4 24.6 26.9 28.1 Output Power at 1dB Compression dBm 12.3 12.7 12.5 12.4 Input Return Loss dB 29.2 15.7 12.9 12.2 10.8 9.4 Output Return Loss dB 27.2 20.4 18.1 16.3 16.1 16.1 Reverse Isolation dB 24.9 24.8 24.4 22.9 22.2 19.9 Noise Figure dB 2.8 2.8 3.2 3.4 Test Conditions: V =5V, I =35mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, R =62 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 7 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS2015 1204 NOT FOR NEW DESIGNS

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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