TGA2525 2-18 GHz Low Noise Amplifier with AGC General Description The Qorvo TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using Qorvos proven standard 0.15 um Power pHEMT production process. The TGA2525 provides a nominal 18 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Greater than 30 dB adjustable gain can be achieved using Vg2 pin. Typical noise figure is 2 dB at 8 GHz. Special circuitry on both Vg1 and Vg2 pins provides ESD protection. Measured Performance The TGA2525 is suitable for a variety of wideband systems Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V , such as point to point radios, radar warning receivers and Vg2 = +1.3 V Typical electronic counter measures. 25 20 The TGA2525 is 100% DC and RF tested on-wafer to 15 ensure performance compliance. The TGA2525 has a Gain 10 protective surface passivation layer providing 5 IRL environmental robustness. 0 -5 ORL -10 -15 -20 -25 -30 -35 Applications 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Wideband Gain Block/LNA Frequency (GHz) X-Ku Point to Point Radio Electronic Warfare Applications 10 20 9 18 8 16 7 14 NF 6 Gain 12 Product Features 5 10 4 8 Frequency Range: 2-18 GHz 3 6 Midband NF: 2 dB 2 4 Gain: 17 dB 1 2 >30 dB adjustable gain with Vg2 0 0 TOI: 29 dBm Typical 2 4 6 8 10 12 14 16 18 22 dBm Nominal Psat, 18 dBm Nominal P1dB Frequency (GHz) ESD Protection circuitry on Vg1 and Vg2 Bias: Vd = 5 V, Id = 75 mA, VG1 = -0.6 V, Ordering Information VG2 = +1.3 V, Typical Technology: 3 MI 0.15 um Power pHEMT Part Description Chip Dimensions: 2.09 x 1.35 x 0.100 mm TGA2525 GaAs MMIC Die, Gel Pack, Qty 100 1075728 TGA2525 Evaluation Board, Qty 1 Data Sheet Rev F, June 2021 Subject to change without notice 1 of 13 www.qorvo.com NF (dB) Gain, IRL, ORL (dB) Gain (dB) TGA2525 2-18 GHz Low Noise Amplifier with AGC 1/ Absolute Maximum Ratings Symbol Parameter Value Notes V -V Drain to Gate Voltage 10 V D G VD Drain Voltage 7 V 2/ V 1 Gate 1 Voltage Range -2 to 0 V G VG2 Gate 2 Voltage Range -2 to +3 V I Drain Current 144 mA 2/ D I 1 Gate 1 Current Range -24 to 24 mA 3/ G IG2 Gate 2 Current Range -24 to 24 mA 3/ P Input Continuous Wave Power 22 dBm 2/ IN Channel Temperature 200 C T channel Storage Temperature 65 to 150 C T storage Note: 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 3/ ESD protection diodes on V , V and V will conduct current for voltages approaching turn-on voltages. Diode turn-on voltage D G1 G2 levels will decrease with decreasing temperature. Data Sheet Rev F, June 2021 Subject to change without notice 2 of 13 www.qorvo.com