TGF2942 DC 25 GHz, 28 V, 2 W GaN RF Transistor Product Overview The Qorvo TGF2942 is a 2 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvos proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant 0.411 x0.551x0.100mm Key Features Frequency: DC to 25 GHz 1 Output Power (P ) : 2.4 W 3dB Functional Block Diagram 1 Linear Gain : 18 dB 1 Typical PAE : 59% 3dB 2 1 Typical Noise Figure : 1.2 dB Operating Voltage: 28 V CW and Pulse capable Non-linear & Noise Models available Note 1: 10 GHz 1 Applications Defense and Aerospace Broadband wireless Low noise amplifier 3, GND Ordering info Part No. ECCN Description DC25GHz, 28 V, 2 W GaN RF TGF2942 EAR99 Transistor Datasheet Rev. A, August 09, 2016 Subject to change without notice - 1 of 24 - www.qorvo.com TGF2942 DC 25 GHz, 28 V, 2 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +60 V Drain Voltage Range, V +12 +20 +29.5 V D Gate Voltage Range, VG -7 to +1.5 V Drain Bias Current, IDQ 10 20 40 mA Drain Current, I 500 mA DMAX Drain Current, I 170 mA D Gate Current Range, IG See page 20. mA 3 Gate Voltage, VG 2.8 V Power Dissipation, CW, P 3.2 W DISS Channel Temperature (TCH) 250 C RF Input Power, CW, 10 GHz, +23 dBm 2 Power Dissipation, CW (P ) 2.9 W D T = 25C Channel Temperature, T 275 C Notes: CH 1. Electrical performance is measured under conditions noted Mounting Temperature in the electrical specifications table. Specifications are not 320 C (30Seconds) guaranteed over all recommended operating conditions. Storage Temperature 65 to +150 C 2. Package base at 85 C 3. To be adjusted to desired IDQ Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Datasheet Rev. A, August 09, 2016 Subject to change without notice - 2 of 24 - www.qorvo.com