TGF4350

Product Data Sheet August 5, 2008 300um Discrete pHEMT TGF4350 Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x 0.514 mm Primary Applications Low Noise amplifiers 17 80 F = 10 GHz Vd = 3 V 15 70 Iq = 15 mA 13 60 11 50 9 40 7 30 5 20 Pout (dBm) 3 10 Gain (dB) PAE (%) 1 0 -12 -8 -4 0 4 8 12 Input Power - dBm 2.4 16 F = 10 GHz 2.2 15 2.0 14 1.8 13 NF (dB) Vd = 3 V 1.6 12 NF (dB) Vd = 5 V 1.4 11 NF (dB) Vd = 8 V Gain (dB) Vd = 3 V 1.2 10 Gain (dB) Vd = 5 V Gain (dB) Vd = 8 V 1.0 9 0.8 8 0.6 7 0.4 6 5 10 15 2025 303540 4550 Drain Current - mA Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Noise Figure - dB Output Power-dBm, Gain-d Associated Gain - dB Power Added Efficiency- Product Data Sheet TGF4350 Electrical Characteristics M AXIM UM RATINGS Symbol Parameter Value Notes + V Positive Supply V oltage 13 V + I Positive Supply C urrent .085 3/ A - I Negative Gate Current .88 mA P Power Dissipation 1.1. W D P Input C ontinuous W ave 20 IN Power dBm T O perating C hannel 150 C 1/, 2/ CH Tem perature T M ounting Tem perature (30 320 C M seconds) T Storage Tem perature -65 C STG to 150 C 1/ These ratings apply to individual FET 2/ Junction operating tem perature w ill directly affect the device m ean tim e to failure (M TTF). For m axim um life it is recom m ended that junction tem peratures be m aintained at the low est possible levels. 3/ N om inal value of Idss DC PROBE TESTS (T = 25 C 5C) A Symbol Parameter Minimum Maximum Value Idss Saturated Drain Current (info 30 141 mA only) V Pinch-off Voltage -1.5 -0.5 V P1-5 BV Breakdown Voltage gate-source -30 -8 V GS1 BV Breakdown Voltage gate-drain -30 -8 V GD1-5 2 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com