TQP7M9104 2W High-Linearity Amplifier General Description The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP/GaAs HBT delivers high performance across 6002700 MHz range of frequencies with 15.8dB Gain, +49.5dBm OIP3 and +32.5dBm P1dB at 2.14GHz while only consuming 24 Pin 4 mm x 4mm leadless SMT Package 435mA quiescent collector current. All devices are 100% RF and DC tested. Product Features The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The 6002700MHz amplifier integrates an on-chip DC over-voltage and RF +32.8dBm P1dB over-drive protection. This protects the amplifier from +49.5dBm Output IP3 electrical DC voltage surges and high input RF input 15.8dB Gain At 2140MHz power levels that may occur in a system. +5V Single Supply, 435mA Collector Current Internal RF Overdrive Protection The TQP7M9104 is targeted for use as a driver amplifier Internal DC Overvoltage Protection in wireless infrastructure where high linearity, medium Internal Active Bias power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high On Chip ESD Protection power amplifiers in current and next generation multi- Shut-down Capability carrier 3G/4G base stations. Capable Of Handling 10:1 VSWR At +5VCC, 2.14GHz,+32.8dBmCWP Or+23.5dBm OUT WCDMAP OUT Functional Block Diagram Applications Repeaters 1 18 Vbias Iref BTS Transceivers 2 17 GND/NC GND/NC BTS High Power Amplifiers 3 16 GND/NC RFout/Vcc CDMA/WCDMA/LTE 4 15 RFin RFout/Vcc 5 14 General Purpose Wireless RFin RFout/Vcc 6 13 GND/NC GND/NC Ordering Information Backside Paddle - RF/DC Ground Part No. Description TQP7M9104 2 Watt High Linearity Amplifier TQP7M9104-PCB900 920960MHz EVB TQP7M9104-PCB2140 2.112.17GHz EVB Standard T/R size = 2500 pieces on a 13 reel. Data Sheet, August 2020 Subject to change without notice 1 of 17 www.qorvo.com 7 24 GND/NC GND/NC 8 23 GND/NC GND/NC 9 22 GND/NC GND/NC 10 21 GND/NC GND/NC 11 20 GND/NC GND/NC 12 19 GND/NC GND/NC TQP7M9104 2W High-Linearity Amplifier Recommended Operating Conditions Electrical specifications are measured at specified Parameter Min Typ Max Units test conditions. Specifications are not guaranteed VCC +5 +5.25 V over all recommended operating conditions. T 40 +85 C CASE 6 Tj (for>10 hours MTTF) 170 C Absolute Maximum Ratings Operation of this device exceeding the parameter Parameter Range /V a lue Units ranges given may cause permanent damage. Storage Temperature 65 to +150C C Device Voltage, V +6.5V dBm CC Maximum Input Power, CW +30dBm V Electrical Specifications Test conditions unless otherwise noted: VCC=+5 V, ICQ = 435 mA, Temp= +25C, Using a TQP7M9104 Application circuit. Parameter Conditions Min Typ Max Units Operational Bandwidth 600 2700 MHz Test Frequency 2140 MHz Power Gain 14.3 15.8 17.3 dB Input Return Loss 12 dB Output Return Loss 9.5 dB Output IP3 Pout=+17dBm/tone, f=1MHz +45.5 +49.5 dBm (1) At 50 dBc ACLR WCDMA Channel Power +23.8 dBm Output P1dB +32 +32.8 dBm Noise Figure 4.4 dB Quiescent Collector Current, Icq 355 435 490 mA VCC +5 V I 19 mA REF Thermal Resistance (jnc to case) 15.7 C/W jc Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Data Sheet, August 2020 Subject to change without notice 2 of 17 www.qorvo.com