TQP9418 High Linearity 0.5 W Small Cell PA Product Overview The TQP9418 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits, suitable for small cell base station applications. 7mmx7mm leadless SMT Package TQP9418 provides 30 dB gain and +27 dBm linear power over the 18051880 MHz frequency range. The amplifier is able to achieve 48dBc ACLR at +27 dBm output power using 20 MHz LTE signal. The TQP9418 integrates two high performance amplifier stages onto a module to allow for a compact system design Key Features and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifiers 1.8051.88 GHz Frequency Range power consumption to be optimized. The TQP9418 is Fully Integrated, 2 Stage Power Amplifier available in a 7x7mm surface mount package. Internally Matched 50 Input/Output 48dBc ACLR at Pavg = +27dBm 31dB Gain 14.5% PAE at +27 dBm 420mA Quiescent Current On-chip Bias Control and Temp. Comp. Circuit Functional Block Diagram Applications Small Cell/Picocell Vref GND 1 14 Enterprise Femtocell Customer Premises Equipment (CPE) GND GND 2 13 Data Cards and Terminals GND RF out Distributed Antenna Systems (DAS) 3 12 Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 4 11 RF in GND 10 5 GND GND 6 9 Backside Paddle RF/DC GND NC GND 7 8 Ordering Information Top View Part No. Description TQP9418 High Linearity 0.5W Small Cell PA TQP9418-PCB 18051880 MHz Evaluation board Standard T/R size = 2500 pieces on a 13 reel Data Sheet, May 31, 2017 Subject to change without notice 1 of 8 www.qorvo.com TQP9418 High Linearity 0.5 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C VCC1, Vcc2 +3.6 +4.5 +5.25 V V +2.75 +2.85 +2.95 V Supply Voltage (VCC) +6 V ref V +3.5 V TCASE 40 +85 C ref Tj at T max +165 C RF Input Power, CW, 50, T=25 C +13 dBm CASE Electrical specifications are measured at specified test conditions. Tj at T = 125C +205C CASE Specifications are not guaranteed over all recommended operating Operation of this device outside the parameter ranges given conditions. above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5V, Vref = +2.85V, Temp= +25C Parameter Conditions Min Typ Max Units Operational Frequency Range 1805 1880 MHz Test Frequency 1840 MHz Gain 28 34 dB 31 Input Return Loss 15 20 dB Output Return Loss 15 25 dB P1dB dBm 36 ACLR P =+27dBm,20MHzLTEE-TM1.1,9.5dB PAR 48 -45 dBc OUT ACLR POUT = +27 dBm, 2X20MHz LTE E-TM1.1, 9.5dB PAR 41 dBc ACLR P = +27 dBm, 15MHz LTE E-TM1.1, 9.5dB PAR dBc OUT 50 ACLR P = +27 dBm, 10MHz LTE E-TM1.1, 9.5dB PAR dBc OUT 49 ACLR POUT = +27 dBm, 5MHz LTE E-TM1.1, 9.5dB PAR 47.5 dBc Power Added Efficiency POUT=+27dBm,20MHzLTEE-TM1.1,9.5dB PAR 13 14.5 % Quiescent Current, I V + V 330 510 mA CQ CC1 CC2 420 Leakage Current VCC = +4.5V, Vref = 0V 13 19.5 A Reference Current , Iref Temp = -40C to +85C, Vref = +2.85V 3 10 mA Operational Current, I Pout = +27dBm 920 mA CC 680 Rise time (10%-90%) 670 ns Switching Speed Fall time (90%-10%) 1205 ns Pout +27dBm, In & Out of band load VSWR 10:1 60 dBc Spurious Output Level No permanent degradation or failure 10:1 - VSWR survivability 2F0 (Pout = 27 dBm), CW signal 42 37 dBc Harmonics 3F0 (Pout = 27 dBm), CW signal 58 53 dBc 4F (Pout = 27 dBm), CW signal 68 63 dBc 0 Thermal Resistance, Module (junction to case) 18.5 C/W jc Parameter Conditions -40C +25C +85C Units Gain Small Signal 33 31.3 29.6 dB ACLR POUT = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -51 -47 dBc -49 PAE P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR 15.5 13.5 % OUT 14.5 P1dB +35.6 +36 +35.8 dBm Test Frequency = 1840MHz Data Sheet, May 31, 2017 Subject to change without notice 2 of 8 www.qorvo.com