1A1 RECTRON SEMICONDUCTOR THRU TECHNICAL SPECIFICATION 1A7 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * High reliability * Low leakage * Low forward voltage drop * High current capability R-1 MECHANICAL DATA * Case: Molded plastic black body ( ) .025 0.65 DIA. * Epoxy: Device hasUL flammability classification 94V-O .021 (0.55) ( ) .787 20.0 * Lead: MIL-STD-202E method 208C guaranteed MIN. * Mounting position: Any * Weight: 0.19 gram ( ) .126 3.2 .106 (2.7) ( ) .102 2.6 DIA091 (2.3) .787 (20.0) MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL 1A1 1A2 1A3 1A4 1A5 1A6 1A7 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Current o IO 1.0 Amps at TA = 25 C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 25 Amps superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) CJ 15 pF 0 R JA 60 C/W Typical Thermal Resistance 0 Operating and Storage Temperature Range TJ, TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) CHARACTERISTICS SYMBOL 1A1 1A2 1A3 1A4 1A5 1A6 1A7 UNITS Maximum Instantaneous Forward Voltage at 1.0A DC VF 1.1 Volts o Maximum DC Reverse Current TA = 25 C 5.0 uAmps o at Rated DC Blocking Voltage 50 TA = 100 C IR Maximum Full Load Reverse Current Full Cycle Average uAmps o 100 .375 (9.5mm) lead length at TL = 75 C NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts 2002-11( ) RATING AND CHARACTERISTIC CURVES 1A1 THRU 1A7 FIG. 1 - TYPICAL FORWARD CURRENT FIG. 2 - TYPICAL INSTANTANEOUS FORWARD DERATING CURVE CHARACTERISTICS 1.0 20 10 .8 4 2 1.0 .6 .4 .4 .2 T = 25 J .1 Single Phase Pulse Width=300uS Half Wave 60Hz 1% Duty Cycle .2 Resistive or .04 Inductive Load .02 0 .01 0 25 50 75 100 125 150 175 .6 .8 1.0 1.2 1.4 1.5 AMBIENT TEMPERATURE, ( ) INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD FIG. 4 - TYPICAL REVERSE CHARACTERISTICS SURGE CURRENT 50 10 8.3ms Single Half Sine-Wave T = 25 J 40 (JEDED Method) 1.0 30 20 0.1 10 .01 0 12 4 6 810 20 40 6080100 0 20 40 60 80 100 120 140 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - TYPICAL JUNCTION CAPACITANCE 200 T = 25 J 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) JUNCTION CAPACITANCE, (pF) INSTANTANEOUS REVERSE INSTANTANEOUS FORWARD CURRENT, (uA) CURRENT, (A)