Product Information

DB107S-T

DB107S-T electronic component of Rectron

Datasheet
Bridge Rectifiers DB-S 1A 1000V DIP Bridge SM GP

Manufacturer: Rectron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7292 ea
Line Total: USD 0.73

1634 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1624 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

DB107S-T
Rectron

1 : USD 0.5048
10 : USD 0.3933
100 : USD 0.2357
500 : USD 0.2185
1000 : USD 0.1702
25000 : USD 0.169
50000 : USD 0.1644

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Length
Width
Height
Series
Packaging
Ir - Reverse Current
Product
Technology
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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DB101S THRU DB107S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * Good for automation insertion *Surge overload rating - 30 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device DB-S *Polarity symbols molded on body *Mounting position: Any .255 (6.5) MECHANICAL DATA ( ) .245 6.2 * Epoxy: Device has UL flammability classification 94V-O ( ) .410 10.4 .045 (1.14) .360 (9.4) ( ) .035 0.89 .060 (1.524) .037 (0.95) (8.8) .346 ( ) .144 3.65 (7.8) .307 ( ) .089 2.25 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified205 (5.2) resistive or inductive load195 (5.0) Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At T = 25 C unless otherwise noted) A RATINGS SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 Volts RRM Maximum RMS Bridge Input Voltage V 35 70 140 280 420 560 700 Volts RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 Volts DC o Maximum Average Forward Output Current at T = 40 C I 1.0 Amps A O Peak Forward Surge Current 8.3 ms single half sine-wave I 30 Amps FSM superimposed on rated load (JEDEC method) 2 2 Typical Current Squarad Time I A Sec t 3.73 R JA 40 0 Typical Thermal Resistance (Note 2) C/W R JL 15 0 Operating and Storage Temperature Range TJ,TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At T = 25 C unless otherwise noted) A CHARACTERISTICS SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS Maximum Forward Voltage Drop per chip ( diode ) at 1.0A DC V 1.0 Volts F o Maximum Reverse Current at Rated uAmps T = 25 C 1.0 A I R o DC Blocking Voltage per element T = 125 C A 0.05 mAmps 2020-04/97 Note: 1. ROHS compliant. REV:E 2. Thermal Resistance: Mounted on PCB.RATING AND CHARACTERISTICS CURVES ( DB101S THRU DB107S ) 60 10 8.3mS Single Half Sine-Wave JEDEC Method 50 1 40 30 0.1 20 O T = 25 C 10 J Pulse Width = 300mS 1% Duty Cycle 0 0.01 2 4 6 10 1 20 40 60 100 0 0.5 1.0 1.5 2.0 2.5 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 1 - MAXIMUM NON-REPETITIVE FIG.2 MAXIMU M INSTANTANEOUS FORWARD SURGE CURRENT FORWARD CHARACTERISTICS 100 1.5 O T = 125 C A 1.0 10 0.5 1 O T = 25 C A 60 Hz RESISTIVE OR INDUCTIVE LOAD 1.0 0 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 150 O PERCENT RATED PEAK REVERSE VOLTAGE, (%) AMBIENT TEMPERATURE, ( C) FIG.3 MAXIMUM REVERS E CHARACTERISTICS FIG.4 TYPICAL FORWARD CURRENT DERATTING CURVE INSTANNTAUEO S REVERSE CURRENT, (uA) PEAK FORWARD SURGE CURRENT, (A) INNSTAUT ANEOSRFDORWA R)CUR ENT, (A AAVEGR EO FRRWARD CURE,NT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Rectron Semiconductor

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