Preliminary Datasheet 2SD2655 R07DS0281EJ0400 Silicon NPN Epitaxial Planer Rev.4.00 Low Frequency Power Amplifier Jan 10, 2014 Features Small size package: MPAK (SC59A) Large Maximum current: I = 1 A C Low collector to emitter saturation voltage: V = 0.3 V max.(at I /I = 0.5 A/0.05 A) CE(sat) C B High power dissipation: P = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) C Complementary pair with 2SB1691 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Note: Marking is WM-. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to Base Voltage V 60 V CBO Collector to emitter voltage V 50 V CEO Emitter to base voltage V 6 V EBO Collector current I 1 A C Collector peak current ic(peak) 2 A Collector power dissipation P 800* mW C Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) R07DS0281EJ0400 Rev.4.00 Page 1 of 6 Jan 10, 2014 2SD2655 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin TypMaxUnit Test Condition Collector to base breakdown voltage V 60 V I = 10 A, I = 0 (BR)CBO C E Collector to emitter breakdown voltage V 50 V I = 1 mA, R = (BR)CEO C BE Emitter to base breakdown voltage V 6 V I = 10 A, I = 0 (BR)EBO E C Collector cutoff current I 100 nA V = 50 V, I = 0 CBO CB E Emitter cutoff current I 100 nA V = 5 V, I = 0 EBO EB C DC current transfer ratio h 200 500 V = 2 V, I = 0.1 A FE CE C Collector to emitter saturation voltage V 0.16 0.3 V I = 0.5 A, I = 0.05 A, CE(sat) C B Pulse test Base to emitter saturation voltage V 0.91 1.2 V I = 0.5 A, I = 0.05 A, BE(sat) C B Pulse test Gain bandwidth product f 280 MHz V = 2 V, I = 0.1 A T CE C Collector output capacitance Cob 4.2 pF V = 10 V, I = 0, CB E f = 1 MHz R07DS0281EJ0400 Rev.4.00 Page 2 of 6 Jan 10, 2014