2SK1317 Silicon N Channel MOS FET REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage V = 1500 V DSS High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain G (Flange) 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1317 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 1500 V DSS Gate to source voltage V 20 V GSS Drain current I 2.5 A D *1 Drain peak current I 7 A D(pulse) Body to drain diode reverse drain current I 2.5 A DR *2 Channel dissipation Pch 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at T = 25C C Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 1500 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 500 A V = 1200 V, V = 0 DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V I = 1 mA, V = 10 V GS(off) D DS 3 Static drain to source on state R 9 12 I = 2 A, V = 15 V * DS(on) D GS resistance 3 Forward transfer admittance y 0.45 0.75 S I = 1 A, V = 20 V * fs D DS Input capacitance Ciss 990 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 125 pF Reverse transfer capacitance Crss 60 pF Turn-on delay time t 17 ns I = 2 A, V = 10 V, d(on) D GS R = 15 L Rise time t 70 ns r Turn-off delay time t 110 ns d(off) Fall time t 60 ns f Body to drain diode forward voltage V 0.9 V I = 2 A, V = 0 DF F GS Body to drain diode reverse recovery t 1750 ns I = 2 A, V = 0, rr F GS time di /dt = 100 A/ s F Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6