Product Information

5962-8963601PA

5962-8963601PA electronic component of Renesas

Datasheet
Special Purpose Amplifiers

Manufacturer: Renesas
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Price (USD)

48: USD 89.1744 ea
Line Total: USD 4280.37

0 - Global Stock
MOQ: 48  Multiples: 48
Pack Size: 48
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 48
Multiples : 48
48 : USD 89.1744

     
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DATASHEET HA-5002/883 FN3705 Rev.4.00 Monolithic, Wideband, High Slew Rate, High Output Current Buffer January 5, 2006 The HA-5002/883 is a monolithic, wideband, high slew rate, Features high output current, buffer amplifier. This Circuit is Processed in Accordance to MIL-STD-883 Utilizing the advantages of the Intersil Dielectric Isolation and is Fully Conformant Under the Provisions of technologies, the HA-5002/883 current buffer offers Paragraph 1.2.1. 1300V/s slew rate typically and 1000V/s minimum with Voltage Gain (R = 1k) 0.98 (Min) L 110MHz of bandwidth. The 100mA minimum output current 0.995 (Typ) capability is enhanced by a 3 output impedance. (R = 100) . 0.96 (Min) L The monolithic HA-5002/883 will replace the hybrid LH0002 0.971 (Typ) with corresponding performance increases. These High Input Impedance 1.5M (Min) characteristics range from the 3M (typ) input impedance to 3M (Typ) the increased output voltage swing. Monolithic design technologies have allowed a more precise buffer to be Low Output Impedance . 5 (Max) developed with more than an order of magnitude smaller 3 (Typ) gain error. The voltage gain is 0.98 guaranteed minimum Very High Slew Rate .1000V/s (Min) with a 1k load and 0.96 minimum with a 100 load. 1300V/ s (Typ) The HA-5002/883 will provide many present hybrid users Wide Small Signal Bandwidth .110MHz (Typ) with a higher degree of reliability and at the same time High Output Current 100mA (Min) increase overall circuit performance. High Pulsed Output Current . 400mA (Max) Ordering Information Monolithic Dielectric Isolation Construction TEMP PART PART RANGE Replaces Hybrid LH0002 NUMBER MARKING (C) PACKAGE Applications HA2-5002/883 HA2-5002/883 -55 to +125 8 Pin Can Line Driver HA4-5002/883 HA4-5002/883 -55 to +125 20 Ld Ceramic LCC Data Acquisition 110MHz Buffer High Power Current Booster High Power Current Source Sample and Holds Radar Cable Driver Video Products Pinouts HA-5002/883 (CLCC) HA-5002/883 TOP VIEW (METAL CAN) TOP VIEW IN 3 2 1 20 19 8 18 NC NC 4 V + V - 1 1 7 1 V + V - 17 5 2 2 16 NC NC 6 V + 2 V - 2 6 2 NC NC 7 15 NC NC 8 14 3 5 NC NC 910 11 12 13 4 OUT FN3705 Rev.4.00 Page 1 of 7 January 5, 2006 NC NC IN V + 1 NC NC V - OUT 1 NC NCHA-5002/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals .44V Thermal Resistance (C/W) (C/W) JA JC Input Voltage . Equal to Supplies Metal Can Package . 160 70 Peak Output Current (50ms On, 1s Off) 400mA Ceramic LCC Package . 80 30 Junction Temperature (T ) .+175C J Package Power Dissipation Limit at +75C for T +175C J Storage Temperature Range -65C to +150C Metal Can Package 625mW ESD Rating <4000V Ceramic LCC Package .1.25W Lead Temperature (Soldering 10s) +300C Package Power Dissipation Derating Factor Above +75C Metal Can Package 6.3mW/C Operating Conditions Ceramic LCC Package .12.5mW/C Operating Temperature Range -55C to +125C Operating Supply Voltage 12V to 15V R 100 L CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 JA for details. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V = 12Vand 15V, R = 50, C 10pF, V = 0V, Unless Otherwise Specified. SUPPLY SOURCE LOAD IN GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUPS TEMPERATURE (C) MIN MAX UNITS Input Offset V V = 15V 1 +25 -20 20 mV IO1 SUP Voltage 2, 3 +125, -55 -30 30 mV V V = 12V 1 +25 -20 20 mV IO2 SUP 2, 3 +125, -55 -30 30 mV Input Bias Current I V = 15V, R = 1k 1+25 -7 7 A B1 SUP S 2, 3 +125, -55 -10 10 A I V = 12V, R = 1k 1+25 -7 7 A B2 SUP S 2, 3 +125, -55 -10 10 A Voltage Gain 1 +AV V = 12V, R = 1k , 1 +25 0.98 - V/V 1 SUP L V = 10V IN 2, 3 +125, -55 0.98 - V/V -AV V = 12V, R = 1k , 1 +25 0.98 - V/V 1 SUP L V = -10V IN 2, 3 +125, -55 0.98 - V/V Voltage Gain 2 +AV V = 12V, R = 100 , 1 +25 0.96 - V/V 2 SUP L V = 10V IN -AV V = 12V, R = 100 , 1 +25 0.96 - V/V 2 SUP L V = -10V IN Voltage Gain 3 +AV V = 15V, R = 100 , 1 +25 0.96 - V/V 3 SUP L V = 10V IN -AV V = 15V, R = 100 , 1 +25 0.96 - V/V 3 SUP L V = -10V IN Voltage Gain 4 +AV V = 15V, 1 +25 0.99 - V/V 4 SUP R = 1k, L 2, 3 +125, -55 0.99 - V/V V = +10V IN -AV V = 15V, 1 +25 0.99 - V/V 4 SUP R = 1k, L 2, 3 +125, -55 0.99 - V/V V = -10V IN FN3705 Rev.4.00 Page 2 of 7 January 5, 2006

Tariff Desc

8542.33.00 43 No -- Amplifiers

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits Digital.
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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