5V2305PGGI8 Renesas

IDT5V2305 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER INDUSTRIAL TEMPERATURE RANGE IDT5V2305 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER FEATURES: DESCRIPTION: High performance 1:5 clock driver for general purpose applica- The IDT5V2305 is a high performance, low skew clock buffer that tions operates up to 200MHz. One bank of five outputs provides low skew copies Operates up to 170MHz at VDD = 2.5V of CLK. Through the use of control pin G, the outputs of bank Y(0:4) can Operates up to 200MHz at VDD = 3.3V be placed in a low state regardless of CLK input. The device operates in Pin-to-pin skew < 75ps at 3.3V operation 2.5V and 3.3V environments. The built-in output enable glitch suppression VDD range: 2.3V to 3.6V ensures a synchronized output enable sequence to distribute full period Output enable glitch suppression clock signals. Available in TSSOP and VFQFPN packages The IDT5V2305 is characterized for operation from -40C to +85C. FUNCTIONAL BLOCK DIAGRAM 3 Y 0 9 Control Logic G 5 Y 1 16 CLK 6 Y 2 11 Y 3 13 Y 4 The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE SEPTEMBER 2014 1 c 2014 Integrated Device Technology, Inc. DSC 6177/20IDT5V2305 2.5V TO 3.3V HIGH PERFORMANCE CLOCK BUFFER INDUSTRIAL TEMPERATURE RANGE PIN CONFIGURATION CLK VDD GND 1 16 CLK 1 16 VDD 2 15 VDD VDD 15 VDD 2 Y0 3 14 VDD Y0 14 NC 3 GND 4 13 Y4 NC 4 Y4 13 GND Y1 5 12 GND NC 5 12 Y1 Y2 6 Y3 6 11 3 11 Y Y2 VDD 7 NC 10 VDD 7 10 VDD 8 9 9 8 G GND G VDD TSSOP VFQFPN TOP VIEW TOP VIEW (1) ABSOLUTE MAXIMUM RATINGS CAPACITANCE(TA = +25C, f = 1MHz, VIN = 0V) Symbol Description Max Unit Parameter Description Min. Typ. Max. Unit VDD Power Supply Voltage 0.5 to +4.6 V CIN Input Capacitance 2.5 pF (2) VI Input Voltage 0.5 to VDD +0.5 V VI = 0V or VDD (2) VO Output Voltage 0.5 to VDD +0.5 V IIK Input Clamp Current 50 mA VI < 0 or VI > VDD IOK Output Clamp Current 50 mA (1) FUNCTION TABLE VO < 0 or VO > VDD Inputs Output IO Continuous Total Output Current 50 mA VO < 0 to VDD G CLK Y(0:4) TSTG Storage Temperature 65 to +150 C LX L HH H NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause NOTE: permanent damage to the device. This is a stress rating only and functional operation 1. H = HIGH Voltage Level of the device at these or any other conditions above those indicated in the operational L = LOW Voltage Level sections of this specification is not implied. Exposure to absolute maximum rating X = Dont Care conditions for extended periods may affect reliability. 2. Not to exceed 4.6V. 2