Product Information

71016S20YGI

71016S20YGI electronic component of Renesas

Datasheet
IDT SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 256
Multiples : 256

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71016S20YGI
Renesas

256 : USD 2.8092
512 : USD 2.7033
N/A

Obsolete
     
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CMOS Static RAM 71016S 1 Meg (64K x 16-Bit) Description Features The IDT71016 is a 1,048,576-bit high-speed Static RAM organized 64K x 16 advanced high-speed CMOS Static RAM as 64K x 16. It is fabricated using high-performance, high-reliability CMOS Equal access and cycle times technology. This state-of-the-art technology, combined with innovative Commercial : 12/15/20ns circuit design techniques, provides a cost-effective solution for high-speed Industrial: 15/20ns memory needs. One Chip Select plus one Output Enable pin The IDT71016 has an output enable pin which operates as fast as 7ns, Bidirectional data inputs and outputs directly TTL- with address access times as fast as 12ns. All bidirectional inputs and compatible outputs of the IDT71016 are TTL-compatible and operation is from a single Low power consumption via chip deselect 5V supply. Fully static asynchronous circuitry is used, requiring no clocks Upper and Lower Byte Enable Pins or refresh for operation. Commercial and industrial product available in 44-pin The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ Plastic SOJ package and 44-pin TSOP package and 44-pin TSOP Type II. Functional Block Diagram Output OE Enable Buffer Address Row / Column A0 - A15 Buffers Decoders , I/O 15 High 8 8 Chip Byte CS Enable I/O Buffer Buffer I/O 8 Sense 16 64K x 16 Amps Memory and Write Array Write Drivers WE Enable I/O 7 Buffer Low 8 8 Byte I/O Buffer I/O 0 BHE Byte Enable Buffers 3210 drw 01 BLE 1 Jun.02.2071016 CMOS Static RAM 1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges (1) Pin Configurations Pin Descriptions A0 - A15 Address Inputs Input A4 1 A5 Chip Select Input 44 CS A3 2 A6 43 WE Write Enable Input A2 3 42 A7 OE Output Enable Input A1 4 OE 41 A0 5 BHE 40 High Byte Enable Input BHE CS 6 BLE 39 Low Byte Enable Input BLE I/O 0 7 38 I/O 15 71016 I/O0 - I/O15 Data Input/Output I/O I/O 1 8 37 I/O 14 PBG44 I/O 2 9 36 I/O 13 VCC 5.0V Power Pwr PHG44 I/O 3 10 I/O 12 35 VSS Ground Gnd VCC 11 VSS 34 3210 tbl 01 VSS 12 VCC 33 , I/O 4 13 I/O 11 32 I/O 5 14 I/O 10 31 I/O 6 I/O 9 15 30 I/O 7 I/O 8 16 29 WE 17 NC 28 A15 18 A8 27 A14 19 A9 26 A13 A10 20 25 A12 A11 21 24 NC NC 22 23 3210 drw 02 SOJ/TSOP Top View NOTE: 1. This text does not indicate orientation of actual part-marking. (1) Truth Table CS OE WE BLE BHE I/O0 - I/O7 I/O8 - I/O15 Function H X X X X High-Z High-Z Deselected - Standby L L H L H DATAOUT High-Z Low Byte Read L L H H L High-Z DATAOUT High Byte Read L L H L L DATAOUT DATAOUT Word Read L X L L L DATAIN DATAIN Word Write L X L L H DATAIN High-Z Low Byte Write L X L H L High-Z DATAIN High Byte Write L H H X X High-Z High-Z Outputs Disabled L X X H H High-Z High-Z Outputs Disabled 3210 tbl 02 NOTE: 1. H = VIH, L = VIL, X = Don t care. 6.42 2 Jun.02.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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