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7130SA100J8

7130SA100J8 electronic component of Renesas

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SRAM 8K(1KX8)CMOS DUALPORT RAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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7130SA100J8
Renesas

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IDT7130SA/LA HIGH SPEED IDT7140SA/LA 1K X 8 DUAL-PORT STATIC SRAM Features On-chip port arbitration logic (IDT7130 Only) High-speed access BUSY output flag on IDT7130; BUSY input on IDT7140 Commercial: 20/25/35/55/100ns (max.) Industrial: 25/55/100ns (max.) INT flag for port-to-port communication Fully asynchronous operation from either port Military: 25/35/55/100ns (max.) Battery backup operation2V data retention (LA only) Low-power operation IDT7130/IDT7140SA TTL-compatible, single 5V 10% power supply Military product compliant to MIL-PRF-38535 QML Active: 550mW (typ.) Standby: 5mW (typ.) Industrial temperature range (40C to +85C) is available IDT7130/IDT7140LA for selected speeds Available in 48-pin DIP, LCC and Ceramic Flatpack, 52-pin Active: 550mW (typ.) Standby: 1mW (typ.) PLCC, and 64-pin STQFP and TQFP MASTER IDT7130 easily expands data bus width to 16-or- Green parts available, see ordering information more-bits using SLAVE IDT7140 Functional Block Diagram OER OEL CEL CER R/WL R/WR , I/O0L-I/O7L I/O0R-I/O7R I/O I/O Control Control (1,2) (1,2) BUSYL BUSYR A9L A9R Address MEMORY Address Decoder ARRAY Decoder A0L A0R 10 10 ARBITRATION CEL and CER INTERRUPT OEL OER LOGIC R/WR R/WL (2) (2) INTR INTL 2689 drw 01 NOTES: 1. IDT7130 (MASTER): BUSY is open drain output and requires pullup resistor. IDT7140 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor. JANUARY 2013 1 2013 Integrated Device Technology, Inc. DSC-2689/15 IDT7130SA/LA and IDT7140SA/LA High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges Description of each port to enter a very low standby power mode. The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port Static RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit Fabricated using CMOS high-performance technology, these de- vices typically operate on only 550mW of power. Low-power (LA) Dual-Port RAM or as aMASTE Dual-Port RAM together with the versions offer battery backup data retention capability, with each Dual- IDT7140SLAV Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or- Port typically consuming 200W from a 2V battery. The IDT7130/IDT7140 devices are packaged in 48-pin sidebraze more-bit memory system applications results in full-speed, error- or plastic DIPs, LCCs, flatpacks, 52-pin PLCC, and 64-pin TQFP free operation without the need for additional discrete logic. Both devices provide two independent ports with separate con- and STQFP. Military grade products are manufactured in compli- ance with the latest revision of MIL-PRF-38535 QML, making it trol, address, and I/O pins that permit independent asynchronous access for reads or writes to any location in memory. An automatic ideally suited to military temperature applications demanding the power down feature, controlled by CE, permits the on chip circuitry highest level of performance and reliability. (1,2,3) Pin Configurations 01/08/02 INDEX 65 43 2 48 47 46 45 44 43 1 7 42 A0R A1L 8 41 A2L A1R 9 40 A2R A3L 10 39 A3R A4L IDT7130/40L48 or F (4) 11 38 L48-1 A5L A4R & 12 37 A6L A5R (4) F48-1 13 36 A7L A6R 48-Pin LCC/ Flatpack 14 35 A8L (5) A7R Top View 15 34 A9L A8R 16 33 I/O0L A9R 17 32 I/O1L I/O7R 18 31 I/O2L I/O6R 19 20 21 22 23 24 25 26 27 28 29 30 , 2689 drw 03 NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. L48-1 package body is approximately .57 in x .57 in x .68 in. F48-1 package body is approximately .75 in x .75 in x .11 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. 2 A0L I/O3L EL O I/O4L INTL I/O5L BUSYL I/O6L I/O7L R/WL CEL GND VCC I/O0R CER I/O1R R/WR I/O2R BUSYR I/O3R INTR I/O4R OER I/O5R

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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