Product Information

7164S20YG8

7164S20YG8 electronic component of Renesas

Datasheet
IDT SRAM 64K(8KX8) BICMOS STAT RAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
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0 - WHS 1

MOQ : 1
Multiples : 1

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7164S20YG8
Renesas

1 : USD 7.5341
10 : USD 2.7133
100 : USD 2.3819
250 : USD 2.2991
1000 : USD 2.123
N/A

Obsolete
     
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CMOS Static RAM 7164S 64K (8K x 8-Bit) 7164L Features Description High-speed address/chip select access time The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K Commercial: 20/25ns (max.) x 8. It is fabricated using high-performance, high-reliability CMOS tech- Industrial: 20/25ns (max.) nology. Military: 20/25/35/45/55/70/85/100ns (max.) Address access times as fast as 20ns are available and the circuit offers Low power consumption a reduced power standby mode. When CS1 goes HIGH or CS2 goes Battery backup operation 2V data retention voltage LOW, the circuit will automatically go to, and remain in, a low-power stand- (L Version only) by mode. The low-power (L) version also offers a battery backup data Produced with advanced CMOS high-performance retention capability at power supply levels as low as 2V. technology All inputs and outputs of the IDT7164 are TTL-compatible and Inputs and outputs directly TTL-compatible operation is from a single 5V supply, simplifying system designs. Fully Three-state outputs static asynchronous circuitry is used, requiring no clocks or refreshing Available in 28-pin DIP, CERDIP and SOJ for operation. Military product compliant to MIL-STD-883, Class B The IDT7164 is packaged in a 28-pin 300 mil CERDIP, a 28-pin 600 Industrial temperature range (40C to +85C) is available mil CERDIP, 300mil Plastic DIP and 300mil SOJ for selected speeds Military grade product is manufactured in compliance with MIL-STD- Green parts available, see ordering information 883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Functional Block Diagram A0 VCC GND 65,536 BIT ADDRESS DECODER MEMORY ARRAY A 12 7 0 I/O 0 I/O CONTROL I/O7 CS1 CS2 CONTROL LOGIC OE 2967 drw 01 WE 1 Jul.30.207164S/L CMOS Static RAM 64K (8K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges (1) (1) Pin Configurations Absolute Maximum Ratings Symbol Rating Com l. Mil. Unit (2) VCC NC 1 VTERM Terminal Voltage -0.5 to +7.0 -0.5 to +7.0 V 28 with Respect A12 WE 2 27 to GND CS2 A7 3 26 o A8 A6 4 25 TA Operating 0 to +70 -55 to +125 C 7164 A9 Temperature A5 5 24 CD28 A4 A11 6 23 o SD28 Temperature -55 to +125 -65 to +135 C TBIAS OE A3 7 22 PJG28 Under Bias PTG28 A2 A10 8 21 o TSTG Storage Temperature -55 to +125 -65 to +150 C CS1 A1 9 20 I/O7 A0 10 19 PT Power Dissipation 1.0 1.0 W I/O6 I/O0 11 18 IOUT DC Output Current 50 50 mA 17 I/O1 I/O5 12 16 I/O4 I/O2 13 2967 tbl 02 NOTES: 15 I/O3 GND 14 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional 2967 drw 02 operation of the device at these or any other conditions above those indicated in the DIP/SOJ operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Top View 2. VTERM must not exceed VCC + 0.5V. NOTE: 1. This text does not indicate orientation of actual part-marking. (1,2,3) Truth Table WE CS1 OE Pin Descriptions CS2 I/O Function Name Description X H X X High-Z Deselected - Standby (ISB) A0 - A12 Address X X L X High-Z Deselected - Standby (ISB) I/O0 - I/O7 Data Input/Output X VHC or X High-Z Deselected - Standby (ISB1) VHC VLC Chip Select CS1 XX VLC X High-Z Deselected - Standby (ISB1) 2 Chip Select CS H L H H High-Z Output Disabled WE Write Enable HL H L DATAOUT Read Data OE Output Enable LL H X DATAIN Write Data GND Ground 2967 tbl 03 NOTES: VCC Power 1. CS2 will power-down CS1, but CS1 will not power-down CS2. 2. H = VIH, L = VIL, X = don t care. 2967 tbl 01 3. VLC = 0.2V, VHC = VCC - 0.2V Recommended DC Operating Recommended Operating Conditions Temperature and Supply Voltage Symbol Parameter Min. Typ. Max. Unit Grade Temperature GND Vcc VCC Supply Voltage 4.5 5.0 5.5 V O O Military -55 C to +125 C0V 5V 10% GND Ground 0 0 0 V O O Industrial -40 C to +85 C0V 5V 10% VIH Input HIGH Voltage 2.2 VCC + 0.5 V O O Commercial 0 C to +70 C0V 5V 10% (1) VIL Input LOW Voltage -0.5 0.8 V 2967 tbl 04 2967 tbl 05 NOTE: 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle. 2 Jul.30.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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