X-On Electronics has gained recognition as a prominent supplier of 71V424L10PHGI8 sram across the USA, India, Europe, Australia, and various other global locations. 71V424L10PHGI8 sram are a product manufactured by Renesas. We provide cost-effective solutions for sram, ensuring timely deliveries around the world.

71V424L10PHGI8

71V424L10PHGI8 electronic component of Renesas
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Part No.71V424L10PHGI8
Manufacturer: Renesas
Category:SRAM
Description: SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Datasheet: 71V424L10PHGI8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

135: USD 12.6639 ea
Line Total: USD 1709.63

Availability - 0
MOQ: 135  Multiples: 135
Pack Size: 135
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1500
Multiples : 1500
1500 : USD 8.7296

0 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 135
Multiples : 135
135 : USD 12.6639
270 : USD 12.2599
1500 : USD 7.2444

     
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We proudly offer the 71V424L10PHGI8 SRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the 71V424L10PHGI8 SRAM.

3.3V CMOS Static RAM IDT71V424S IDT71V424L 4 Meg (512K x 8-Bit) Features Description 512K x 8 advanced high-speed CMOS Static RAM The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized JEDEC Center Power / GND pinout for reduced noise as 512K x 8. It is fabricated using high-perfomance, high-reliability CMOS Equal access and cycle times technology. This state-of-the-art technology, combined with innovative Commercial and Industrial: 10/12/15ns circuit design techniques, provides a cost-effective solution for high-speed Single 3.3V power supply memory needs. One Chip Select plus one Output Enable pin The IDT71V424 has an output enable pin which operates as fast as Bidirectional data inputs and outputs directly 5ns, with address access times as fast as 10ns. All bidirectional inputs and TTL-compatible outputs of the IDT71V424 are TTL-compatible and operation is from a Low power consumption via chip deselect single 3.3V supply. Fully static asynchronous circuitry is used, requiring Available in 36-pin, 400 mil plastic SOJ package and no clocks or refresh for operation. 44-pin, 400 mil TSOP. The IDT71V424 is packaged in a 36-pin, 400 mil Plastic SOJ and 44- pin, 400 mil TSOP. Functional Block Diagram A0 4,194,304-BIT ADDRESS MEMORY ARRAY DECODER A18 8 8 I/O0-I/O7 I/O CONTROL 8 WE CONTROL OE LOGIC CS 3622 drw 01 SEPTEMBER 2013 1 2013 Integrated Device Technology, Inc. DSC-3622/10IDT71V424S, IDT71V424L, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Pin Configuration Pin Configuration NC NC 1 44 A0 1 36 NC NC 2 NC 43 A1 2 35 A18 A0 3 NC 42 A2 3 34 A17 A18 A1 4 41 A3 4 33 A16 A17 A4 5 32 A15 A2 5 40 CS OE A16 6 31 A3 6 39 I/O 0 7 30 I/O 7 A4 7 38 A15 I/O 1 8 29 I/O 6 8 37 CS OE SO36-1 VDD 9 28 VSS I/00 9 36 I/07 VSS 10 27 VDD I/01 10 35 I/06 I/O 2 11 26 I/O 5 SO44-2 I/O 3 12 25 I/O 4 VDD 11 34 VSS WE 13 24 A14 VSS 12 33 VDD A5 14 23 A13 I/02 13 32 I/05 A6 15 22 A12 I/03 14 31 I/04 A7 16 21 A11 A14 15 30 WE A8 17 20 A10 A5 16 29 A13 A9 18 19 NC A6 17 28 A12 A7 18 27 A11 3622 drw 02 SOJ A8 19 26 A10 Top View NC A9 20 25 NC NC 21 24 NC NC 22 23 3622 drw 11 TSOP Top View Pin Description Capacitance (TA = +25C, f = 1.0MHz, SOJ package) A0 A18 Address Inputs Input (1) Symbol Parameter Conditions Max. Unit Chip Select Input CS CIN Input Capacitance VIN = 3dV 7 pF WE Write Enable Input CI/O I/O Capacitance VOUT = 3dV 8 pF OE Output Enable Input 3622 tbl 03 I/O0 - I/O7 Data Input/Output I/O NOTE: 1. This parameter is guaranteed by device characterization, but not production VDD 3.3V Power Power tested. VSS Ground Gnd 3622 tbl 02 (1,2) Truth Table CS OE WE I/O Function OUT Read Data LL H DATA LX L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z Deselected - Standby (ISB) (3) X X High-Z Deselected - Standby (ISB1) VHC 3622 tbl 01 NOTES: 1. H = VIH, L = VIL, x = Don t care. 2. VLC = 0.2V, VHC = VDD -0.2V. 3. Other inputs VHC or VLC. 6.422

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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