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72V825L15PFI

72V825L15PFI electronic component of Renesas

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FIFO 3.3V 1KX18 SYNC FIFO

Manufacturer: Renesas
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72V825L15PFI
Renesas

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IDT72V805 3.3 VOLT CMOS DUAL SyncFIFO IDT72V815 DUAL 256 x 18, DUAL 512 x 18, IDT72V825 DUAL 1,024 x 18, DUAL 2,048 x 18 IDT72V835 and DUAL 4,096 x 18 IDT72V845 Easily expandable in depth and width FEATURES: Asynchronous or coincident Read and Write Clocks The IDT72V805 is equivalent to two IDT72V205 256 x 18 FIFOs Asynchronous or synchronous programmable Almost-Empty The IDT72V815 is equivalent to two IDT72V215 512 x 18 FIFOs and Almost-Full flags with default settings The IDT72V825 is equivalent to two IDT72V225 1,024 x 18 FIFOs Half-Full flag capability The IDT72V835 is equivalent to two IDT72V235 2,048 x 18 FIFOs Output enable puts output data bus in high-impedance state The IDT72V845 is equivalent to two IDT72V245 4,096 x 18 FIFOs High-performance submicron CMOS technology Offers optimal combination of large capacity (8K), high speed, Available in a 128-pin thin quad flatpack (TQFP) design flexibility, and small footprint Industrial temperature range (40C to +85C) is available Ideal for the following applications: Green parts available, see ordering information Network switching Two level prioritization of parallel data DESCRIPTION: Bidirectional data transfer Bus-matching between 18-bit and 36-bit data paths The IDT72V805/72V815/72V825/72V835/72V845 are dual 18-bit-wide Width expansion to 36-bit per package synchronous (clocked) First-in, First-out (FIFO) memories designed to run Depth expansion to 8,192 words per package off a 3.3V supply for exceptionally low power consumption. One dual 10 ns read/write cycle time IDT72V805/72V815/72V825/72V835/72V845 device is functionally equiva- 5V input tolerant lent to two IDT72V205/72V215/72V225/72V235/72V245 FIFOs in a single IDT Standard or First Word Fall Through timing package with all associated control, data, and flag lines assigned to Single or double register-buffered Empty and Full Flags independent pins. These devices are very high-speed, low-power First-In, FUNCTIONAL BLOCK DIAGRAM HFA/(WXOA) FFA/IRA PAEA EFA/ ORA WCLKA WCLKB DA0-DA17 WENA LDA WENB DB0-DB17 LDB PAFA INPUT OFFSET INPUT OFFSET REGISTER REGISTER REGISTER REGISTER FFB/IRB FLAG PAFB WRITE FLAG LOGIC WRITE EFB/ORB CONTROL RAM LOGIC CONTROL ARRAY RAM PAEB LOGIC LOGIC ARRAY 256 x 18 HFB/(WXOB) 512 x 18 256 x 18 512 x 18 1,024 x 18 READ WRITE 2,048 x 18 1,024 x 18 POINTER READ WRITE 2,048 x 18 4,096 x 18 POINTER POINTER POINTER 4,096 x 18 FLA READ READ CONTROL WXIA EXPANSION CONTROL LOGIC (HFA)/WXOA LOGIC LOGIC EXPANSION RXIA OUTPUT LOGIC OUTPUT REGISTER RXOA REGISTER RESET RSA LOGIC RESET LOGIC RSB RCLKB RCLKA OEB QA0-QA17 RENB OEA RENA RXOB QB0-QB17 RXIB (HFB)/WXOB WXIB 4295 drw 01 FLB IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. The SyncFIFO is a trademark of Integrated Device Technology, Inc. COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES FEBRUARY 2009 1 2009 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice. DSC-4295/4IDT72V805/72V815/72V825/72V835/72V845 COMMERCIAL AND INDUSTRIAL 3.3 V CMOS DUAL SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 4,096 x 18 TEMPERATURE RANGES by asserting the Load pin (LD). A Half-Full flag (HF) is available for each FIFO DESCRIPTION (CONTINUED) that is implemented as a single device. First-Out (FIFO) memories with clocked read and write controls. These FIFOs There are two possible timing modes of operation with these devices: are applicable for a wide variety of data buffering needs, such as optical disk IDT Standard mode and First Word Fall Through (FWFT) mode. controllers, Local Area Networks (LANs), and interprocessor communication. In IDT Standard Mode, the first word written to an empty FIFO will not Each of the two FIFOs contained in these devices has an 18-bit input and appear on the data output lines unless a specific read operation is output port. Each input port is controlled by a free-running clock (WCLK), and performed. A read operation, which consists of activating REN and an input enable pin (WEN). Data is read into the synchronous FIFO on every enabling a rising RCLK edge, will shift the word from internal memory to the clock when WEN is asserted. The output port of each FIFO bank is controlled data output lines. by another clock pin (RCLK) and another enable pin (REN). The Read Clock In FWFT mode, the first word written to an empty FIFO is clocked directly can be tied to the Write Clock for single clock operation or the two clocks can to the data output lines after three transitions of the RCLK signal. A REN run asynchronous of one another for dual-clock operation. An Output Enable does not have to be asserted for accessing the first word. pin (OE) is provided on the read port of each FIFO for three-state control of These devices are depth expandable using a Daisy-Chain technique or the output. First Word Fall Through (FWFT) mode. The XI and XO pins are used to The synchronous FIFOs have two fixed flags, Empty Flag/Output Ready expand the FIFOs. In depth expansion configuration, FL is grounded on (EF/OR) and Full Flag/Input Ready (FF/IR), and two programmable flags, the first device and set to HIGH for all other devices in the Daisy Chain. Almost-Empty (PAE) and Almost-Full (PAF). The offset loading of the The IDT72V805/72V815/72V825/72V835/72V845 are fabricated using programmable flags is controlled by a simple state machine, and is initiated IDTs high-speed submicron CMOS technology. PIN CONFIGURATIONS INDEX VCC LDA 1 102 PAFA OEA 2 101 RXIA 100 RSA 3 FFA VCC 4 99 WXOA/HFA 98 5 GND RXOA 97 EFA 6 QA0 96 QA17 7 95 QA1 QA16 8 GND 94 GND 9 93 QA2 10 QA15 QA3 92 VCC 11 VCC 91 QA14 12 90 QA4 13 QA13 GND 89 GND 14 88 QA5 15 QA12 QA6 87 QA11 16 86 VCC QA7 17 85 QA8 18 QA10 GND 84 QA9 19 83 DB8 DB7 20 82 DB9 DB6 21 81 DB10 DB5 22 80 DB4 23 DB11 79 DB12 DB3 24 78 DB13 DB2 25 77 DB14 DB1 26 76 DB15 DB0 27 PAEB 28 75 DB16 74 DB17 FLB 29 73 GND WCLKB 30 RCLKB 31 72 WENB 71 RENB WXIB 32 LDB 33 70 VCC 69 OEB PAFB 34 68 RSB RXIB 35 36 67 VCC FFB 66 GND 37 WXOB/HFB EFB 38 65 RXOB 4295 drw 02 TQFP (PK128-1, ORDER CODE: PF) TOP VIEW 2 FEBRUARY 11, 2009 QB0 39 128 WXIA QB1 40 127 WENA GND 41 126 WCLKA 42 125 FLA QB2 43 PAEA QB3 124 VCC 44 123 DA0 DA1 QB4 45 122 DA2 GND 46 121 47 DA3 QB5 120 DA4 QB6 48 119 49 118 DA5 QB7 50 QB8 117 DA6 116 DA7 GND 51 DA8 QB9 52 115 DA9 114 QB10 53 DA10 VCC 54 113 DA11 55 112 QB11 DA12 QB12 56 111 DA13 57 110 GND DA14 109 QB13 58 DA15 QB14 59 108 DA16 107 VCC 60 DA17 61 106 QB15 GND 62 105 GND RCLKA 104 QB16 63 RENA 64 103 QB17

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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