74FCT16244CTPAG Renesas

IDT54/74FCT16244T/AT/CT FAST CMOS 16-BIT BUFFER/LINE DRIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES FAST CMOS 16-BIT IDT54/74FCT16244T/AT/CT BUFFER/LINE DRIVER FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The FCT16244T 16-Bit Buffer/Line Driver is for bus interface or signal High-speed, low-power CMOS replacement for ABT functions buffering applications requiring high speed and low power dissipation. These Typical tSK(o) (Output Skew) < 250ps devices have a flow through pin organization, and shrink packaging to simplify Low input and output leakage 1A (max.) board layout. All inputs are designed with hysteresis for improved noise margin. ESD > 2000V per MIL-STD-883, Method 3015 > 200V using The three-state controls allow independent 4-bit, 8-bit or combined 16-bit machine model (C = 200pF, R = 0) operation. These parts are plug in replacements for 54/74ABT16244 where High drive outputs (32mA IOH, 64mA IOL) higher speed, lower noise or lower power dissipation levels are desired. Power off disable outputs permit live insertion The FCT16244T is ideally suited for driving high capacitance loads Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, (>200pF) and low impedance backplanes. Thesehigh driv buffers are TA = 25C designed with power off disable capability to allowlive insertio of boards when Available in the following packages: used in a backplane interface. Industrial: SSOP, TSSOP Military: CERPACK FUNCTIONAL BLOCK DIAGRAM 1OE 3OE 1Y1 3Y1 1A1 3A1 3A2 3Y2 1A2 1Y2 3A3 1Y3 3Y3 1A3 3Y4 1A4 3A4 1Y4 2OE 4OE 2Y1 4A1 4Y1 2A1 4A2 4Y2 2A2 2Y2 4A3 4Y3 2A3 2Y3 2Y4 4A4 4Y4 2A4 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND INDUSTRIAL TEMPERATURE RANGES SEPTEMBER 2009 1 2009 Integrated Device Technology, Inc. DSC-5460/6IDT54/74FCT16244T/AT/CT FAST CMOS 16-BIT BUFFER/LINE DRIVER MILITARY AND INDUSTRIAL TEMPERATURE RANGES (1)(1)(1)(1)(1) PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol Description Max Unit (2) VTERM Terminal Voltage with Respect to GND 0.5 to +7 V 1 48 (3) 1OE 2OE VTERM Terminal Voltage with Respect to GND 0.5 to VCC+0.5 V TSTG Storage Temperature 65 to +150 C 2 47 1Y1 1A1 IOUT DC Output Current 60 to +120 mA 3 46 1Y2 1A2 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause GND 4 45 GND permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational 5 44 1Y3 1A3 sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6 43 1Y4 1A4 2. All device terminals except FCT162XXXT Output and I/O terminals. 3. Output and I/O terminals terminals for FCT162XXXT and FCT166XXXT. VCC 7 42 VCC 8 41 2Y1 2A1 CAPACITANCE (TA = +25C, F = 1.0MHz) 9 40 2Y2 2A2 (1) Symbol Parameter Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 3.5 6 pF GND 10 39 GND COUT Output Capacitance VOUT = 0V 3.5 8 pF 11 38 2A3 2Y3 NOTE: 1. This parameter is measured at characterization but not tested. 12 37 2A4 2Y4 13 36 3A1 3Y1 14 35 PIN DESCRIPTION 3Y2 3A2 Pin Names Description GND 15 34 GND xOE 3-State Output Enable Inputs (Active LOW) 16 33 3Y3 3A3 xA x Data Inputs x Y x 3-State Outputs 17 32 3Y4 3A4 VCC 18 31 VCC (1) 19 30 4A1 FUNCTION TABLE 4Y1 20 29 Inputs Outputs 4A2 4Y2 xOE xAx xYx 21 28 GND GND LL L 22 27 4Y3 4A3 LH H 23 26 4Y4 4A4 HX Z 24 25 4OE 3OE NOTE: 1. H = HIGH Voltage Level X = Dont Care L = LOW Voltage Level Z = High-Impedance SSOP/ TSSOP/ CERPACK TOP VIEW 2