Preliminary Datasheet BCR10PM-12LA R07DS0104EJ0300 (Previous: REJ03G0304-0200) Triac Rev.3.00 Medium Power Use Sep 13, 2010 Features I : 10 A Insulated Type T (RMS) V : 600 V Planar Passivation Type DRM Note5 I , I , I : 30 mA (20 mA) UL Recognised : Yellow Card No. E223904 FGTI RGTI RGT III Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay, copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices Maximum Ratings Voltage class Parameter Symbol Unit 12 Note1 Repetitive peak off-state voltage V 600 V DRM Note1 Non-repetitive peak off-state voltage V 720 V DSM R07DS0104EJ0300 Rev.3.00 Page 1 of 7 Sep 13, 2010 BCR10PM-12LA Preliminary Parameter Symbol Ratings Unit Conditions RMS on-state current I 10 A Commercial frequency, sine full wave T (RMS) 360 conduction, Tc = 85C Surge on-state current I 100 A 60Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusing It 41.6 A s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation P 5 W GM Average gate power dissipation P 0.5 W G (AV) Peak gate voltage V 10 V GM Peak gate current I 2 A GM Junction temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C Mass 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25C, AC 1 minute, T T G terminal to case 1 2 Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 2.0 mA Tj = 125 C, V applied DRM DRM On-state voltage V 1.5 V Tc = 25C, I = 15 A, TM TM Instantaneous measurement Note2 Gate trigger voltage V 1.5 V Tj = 25C, V = 6 V, R = 6 , FGT D L R = 330 G V 1.5 V RGT V 1.5 V RGT Note2 Note5 Gate trigger current I 30 mA Tj = 25C, V = 6 V, R = 6 , FGT D L Note5 R = 330 G I 30 mA RGT Note5 I 30 mA RGT Gate non-trigger voltage V 0.2 V Tj = 125C, V = 1/2 V GD D DRM Note3 Thermal resistance R 3.5 C/W Junction to case th (j-c) Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125C Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance R in case of greasing is 0.5C/W. th (c-f) 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (I 20 mA) is also available. (I item: 1) GT GT Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Time Supply Voltage Tj = 125C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 5.0 A/ms Main Voltage Time 3. Peak off-state voltage (dv/dt)c V = 400 V V D D R07DS0104EJ0300 Rev.3.00 Page 2 of 7 Sep 13, 2010