Product Information

F1423NBGI

F1423NBGI electronic component of Renesas

Datasheet
RF Amplifier F1423 EVB Freq Dig VGA

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 3.6676 ea
Line Total: USD 14.67

0 - Global Stock
MOQ: 4  Multiples: 4
Pack Size: 4
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 8
Multiples : 1

Stock Image

F1423NBGI
Renesas

8 : USD 4.0432
20 : USD 3.8934
75 : USD 3.8934
200 : USD 3.7436
750 : USD 3.7436

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 490
Multiples : 490

Stock Image

F1423NBGI
Renesas

490 : USD 3.7375
980 : USD 3.703
2940 : USD 3.703
5390 : USD 3.703
10290 : USD 3.6685

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
F1653NLGI electronic component of Renesas F1653NLGI

Modulator / Demodulator Broadband ZIF/CIF LTE MIMO
Stock : 490

F1701EVBI electronic component of Renesas F1701EVBI

RF Development Tools F1701 EVB Dual RF
Stock : 2

F1751EVBI electronic component of Renesas F1751EVBI

RF Development Tools F1751 Dual RF
Stock : 3

F1763EVBI electronic component of Renesas F1763EVBI

RF Development Tools F1763 Dual RF
Stock : 3

F1650NLGI electronic component of Renesas F1650NLGI

IDT Modulator Demodulator Broadband ZIFCIF IQ Mod LTE MIMO
Stock : 0

F1701NBGI electronic component of Renesas F1701NBGI

RF Mixer Ultra-Linear Single Ch Mixer Rx 11.8dB
Stock : 490

F1751NBGI electronic component of Renesas F1751NBGI

RF Mixer Ultra-Linear Single Ch Mixer Rx 11.8dB
Stock : 490

F1431NBGK8 electronic component of Renesas F1431NBGK8

RF Switch ICs
Stock : 0

F1431NBGK electronic component of Renesas F1431NBGK

RF Switch ICs
Stock : 0

F1451EVSK electronic component of Renesas F1451EVSK

RF Development Tools Evaluation Kit for F1451 TX VGA
Stock : 2

Image Description
HMC863ALC4TR-R5 electronic component of Analog Devices HMC863ALC4TR-R5

RF Amplifier Amplifer
Stock : 0

MGA-31489-BLKG electronic component of Broadcom MGA-31489-BLKG

Avago Technologies RF Amplifier 0.1W High Gain Driver Amplifier
Stock : 0

MGA-65606-BLKG electronic component of Broadcom MGA-65606-BLKG

Avago Technologies RF Amplifier LNA with Bypass 2.5 - 4.0 GHz
Stock : 0

HMC-APH565-SX electronic component of Analog Devices HMC-APH565-SX

RF Amplifier GaAs HEMT MMIC Med pow amp, 50 - 66 GHz
Stock : 0

SA604AD/02J electronic component of NXP SA604AD/02J

RF Amplifier FM IF SYSTEM LOW PWR
Stock : 0

EV1HMC392ALC4 electronic component of Analog Devices EV1HMC392ALC4

RF Development Tools Eval Board
Stock : 0

MC13852EPR2 electronic component of NXP MC13852EPR2

RF Amplifier Piccolo LB-Sing Band LNA
Stock : 0

HMC564LC4 electronic component of Analog Devices HMC564LC4

Analog Devices Hittite RF Amplifier
Stock : 0

HMC504LC4B electronic component of Analog Devices HMC504LC4B

Analog Devices Hittite RF Amplifier
Stock : 0

BGB 719N7ESD E6327 electronic component of Infineon BGB 719N7ESD E6327

Infineon Technologies RF Amplifier RF BIP TRANSISTORS
Stock : 0

F1423 Datasheet TX Differential Input RF Amplifier 600 MHz to 3000 MHz GENERAL DESCRIPTION FEATURES The F1423 is a 600 MHz to 3000 MHz TX differential Broadband 600 MHz 3000 MHz input / single-ended output RF amplifier used in 13.1 dB typical gain 2000 MHz transmitter applications. 5.1 dB NF 2000 MHz +41.8 dBm OIP3 2000 MHz The F1423 TX Amp provides 13.1 dB gain with +21.5 dBm output P1dB 2000 MHz +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. Single 5 V supply voltage This device uses a single 5 V supply and 120 mA of I . CC I = 120 mA CC This device is packaged in a 4mm x 4mm, 24-pin Thin Up to +105 C T operating temperature CASE QFN with 50 ohm differential RF input and 50 ohm 50 differential input impedance single ended RF output impedances for ease of 50 single ended output impedance integration into the signal-path. Positive gain slope for board loss compensation Standby mode for power savings 4 mm x 4 mm, 24-pin TQFN package COMPETITIVE ADVANTAGE In typical Base Stations, RF Amplifiers are used in the TX traffic paths to drive the transmit power amplifier. FUNCTIONAL BLOCK DIAGRAM The F1423 TX Amplifier offers very high reliability due to its construction using silicon die in a QFN package. The F1423 includes a broadband differential input to accept AC-coupled signals directly from a balanced modulator or RF DAC architecture. RFOUT RFIN APPLICATIONS Multi-mode, Multi-carrier Transmitters GSM850/900 Base Stations PCS1900 Base Stations STBY BAND SEL DCS1800 Base Stations WiMAX and LTE Base Stations UMTS/WCDMA 3G Base Stations ORDERING INFORMATION PHS/PAS Base Stations Public Safety Infrastructure Tape & Reel F1423NBGI8 RF Product Line Green F1423, Rev O 11/6/2015 1 F1423 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units V to GND V -0.3 +5.5 V CC CC STBY, Band Sel V -0.3 V + 0.25 V Cntl CC RBIAS1 I +1.5 mA RB1 RBIAS2 I +0.8 mA RB2 1 RFIN+, RFIN-, Voltage V -0.02 +0.02 V RFin 1 RFIN+, RFIN-, Current I -5 +5 mA RFin RFOUT externally applied DC voltage V V - 0.15 V + 0.15 V RFout CC CC RF Differential Input Power P +22 dBm in (applied for 24 hours maximum) Continuous Power Dissipation P 1.5 W diss Junction Temperature T 150 C j Storage Temperature Range T -65 150 C st Lead Temperature (soldering, 10s) 260 C ElectroStatic Discharge HBM Class 2 (JEDEC/ESDA JS-001-2014) (2000 V) ElectroStatic Discharge CDM Class C3 (JESD 22-C101F) (1000 V) Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 40 C/W JA (Junction Case) The Case is defined as the exposed paddle 4 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 TM Zero-Distortion , TX Amplifier 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted