Product Information

R1LP0108ESF-5SI#B1

R1LP0108ESF-5SI#B1 electronic component of Renesas

Datasheet
SRAM Advanced LPSRAM, 16Mb, 1M x 16, Pb free
Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1561 ea
Line Total: USD 3.16

395 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
395 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 3.1561
10 : USD 2.8714
100 : USD 2.5273
468 : USD 2.5035
1092 : USD 2.3611
2652 : USD 2.1832

Read More Specifications

     
Manufacturer
Product Category
Memory Size
Access Time
Maximum Clock Frequency
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Packaging
Supply Current - Max
Organisation
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Additional Infomation About Product

R1LV1616R Series REJ03C0101-0400Z Rev.4.00 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas s high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device TSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm , a 48pin thin small outline mount device TSOP / 12mm x 20mm with the pin- pitch of 0.5mm or a 48balls fine pitch ball grid array f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7-3.6V power supply Small stand-by current:2A (3.0V, typ.) Data retention supply voltage =2.0V No clocks, No refresh All inputs and outputs are TTL compatible Easy memory expansion by CS1 , CS2, LB and UB Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention on the I/O bus Process technology: 0.15um CMOS REJ03C0101-0400Z Rev.4.00 2007.09.12 page 1 of 15R1LV1616R Series Ordering Information Type No. Access time Package R1LV1616RSD-5S% 55 ns (Note0) 350-mil 52-pin plastic - TSOP(II) R1LV1616RSD-7S% 70 ns (normal-bend type) (52PTG) R1LV1616RSD-8S% 85 ns R1LV1616RBG-5S% 55 ns (Note0) R1LV1616RBG-7S% 70 ns 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball R1LV1616RBG-8S% 85 ns R1LV1616RSA-5S% 55 ns (Note0) 12mm x 20mm plastic TSOP(I) R1LV1616RSA-7S% 70 ns (normal-bend type) (48P3R) R1LV1616RSA-8S% 85 ns Note0. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customers system. Please contact our sales office in your region, in case of the inquiry for 55ns parts. % - Temperature version see table below % Temperature Range R 0 ~ +70 C I -40 ~ +85 C REJ03C0101-0400Z Rev.4.00 2007.09.12 page 2 of 15

HS Compliance

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

Renesas may also be referenced as

CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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