UPA671T-T1-A Renesas

UPA671T-T1-A electronic component of Renesas

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UPA671T-T1-A MOSFETs across the USA, India, Europe, Australia, and various other global locations. UPA671T-T1-A MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	UPA671T-T1-A
Manufacturer:	Renesas
Category:	MOSFETs
Description:	Transistor Low-power CMOS logic gate with open-drain output and input protection.
Datasheet:	UPA671T-T1-A Datasheet (PDF)

Price (USD)

4: USD 8.7892 ea
Line Total: USD 35.16

Availability : 0

Qty	Unit Price
4	$ 8.7892
10	$ 6.8273

UPA671T-T1-A More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 4
Multiples : 1

Qty	Unit Price
4	$ 8.7892
10	$ 6.8273

Specifications

Manufacturer Renesas Renesas
Product Category MOSFETs MOSFETs
RoHS - XON 1 1
Brand Renesas Renesas

We are delighted to provide the UPA671T-T1-A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPA671T-T1-A and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The UPA671T-T1-A is a Power MOSFET product from Renesas Electronics Corporation. It is a n-channel MOSFET and is comprised of a vertical double diffusion type of MOS structure. It features low on-resistance and low gate charge that allow it to operate in low noise, high-performance switching and amplification applications. This part has a drain-source voltage rating of 500V, a drain-gate voltage rating of 500V, an on-resistance of 4.2 mO, and an avalanche rating of 200V. This component is RoHS-compliant and is designed for use in medium- and high-power applications such as AC adapters, automotive systems, and LED lighting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CEL (RENESAS) may also be referenced as

ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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