NVMFS5C460N
Power MOSFET
40 V, 5.3 m, 71 A, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low R to Minimize Conduction Losses
DS(on)
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Low Q and Capacitance to Minimize Driver Losses
G
NVMFS5C460NWF Wettable Flank Option for Enhanced Optical
Inspection
V R MAX I MAX
(BR)DSS DS(ON) D
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant 40 V 5.3 m @ 10 V 71 A
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
D (5,6)
Parameter Symbol Value Unit
DraintoSource Voltage V 40 V
DSS
GatetoSource Voltage V 20 V
GS
Continuous Drain T = 25C I 71 A
D
C G (4)
Current R
JC
T = 100C 50
(Notes 1, 3) C
Steady
State
S (1,2,3)
Power Dissipation P W
T = 25C 50
C D
R (Note 1)
JC
NCHANNEL MOSFET
T = 100C 25
C
Continuous Drain T = 25C I 19 A
A D
Current R
JA
MARKING
T = 100C 13
(Notes 1, 2, 3) A
Steady
DIAGRAM
State
Power Dissipation T = 25C P 3.6 W
D
A
D
R (Notes 1 & 2)
JA
1
T = 100C 1.8
A
S D
DFN5 XXXXXX
S
Pulsed Drain Current T = 25C, t = 10 s I 352 A
A p DM
(SO8FL) AYWZZ
S
Operating Junction and Storage Temperature T , T 55 to C
J stg
CASE 488AA
G D
+ 175
STYLE 1
D
Source Current (Body Diode) I 42 A
S
XXXXXX = 5C460N
Single Pulse DraintoSource Avalanche E 1667 mJ
XXXXXX = (NVMFS5C460N) or
AS
Energy (I = 4.6 A)
L(pk) XXXXXX = 460NWF
XXXXXX = (NVMFS5C460NWF)
Lead Temperature for Soldering Purposes T 260 C
L
A = Assembly Location
(1/8 from case for 10 s)
Y = Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
W = Work Week
device. If any of these limits are exceeded, device functionality should not be
ZZ = Lot Traceability
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
Parameter Symbol Value Unit
See detailed ordering, marking and shipping information in the
JunctiontoCase Steady State R 3.0 C/W
JC package dimensions section on page 5 of this data sheet.
JunctiontoAmbient Steady State (Note 2) 42
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
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2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
Semiconductor Components Industries, LLC, 2017
1 Publication Order Number:
January, 2018 Rev. 0 NVMFS5C460N/DNVMFS5C460N
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
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Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V / 24.7
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V,
T = 25 C 10
DSS GS J
V = 40 V A
DS
T = 125C 250
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V V = V , I = 250 A 2.5 3.5 V
GS(TH) GS DS D
Threshold Temperature Coefficient V /T 6.8 mV/C
GS(TH) J
DraintoSource On Resistance R V = 10 V I = 35 A 4.4 5.3 mV/C
DS(on) GS D
Forward Transconductance g V =15 V, I = 35 A 53 S
FS DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C 1000
ISS
Output Capacitance C 530
V = 0 V, f = 1 MHz, V = 25 V pF
OSS
GS DS
Reverse Transfer Capacitance C 22
RSS
Total Gate Charge Q 16
G(TOT)
Threshold Gate Charge Q 3.2
G(TH)
nC
GatetoSource Charge Q 5.7
V = 10 V, V = 32 V; I = 35 A
GS
GS DS D
GatetoDrain Charge Q 2.7
GD
Plateau Voltage V 5.2 V
GP
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time t 11
d(ON)
Rise Time t 72
r
V = 10 V, V = 32 V,
GS DS
ns
I = 35 A, R = 1
D G
TurnOff Delay Time t 24
d(OFF)
Fall Time t 8
f
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
T = 25C 0.87 1.2
SD J
V = 0 V,
GS
V
I = 35 A
S
T = 125C 0.75
J
Reverse Recovery Time t 36
RR
Charge Time t 17
a ns
V = 0 V, dIs/dt = 100 A/s,
GS
I = 35 A
S
Discharge Time t 18
b
Reverse Recovery Charge Q 16 nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width 300 s, duty cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
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