1SS356TW11 ROHM

1SS356TW11 electronic component of ROHM
1SS356TW11 ROHM
1SS356TW11 PIN Diodes
1SS356TW11  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1SS356TW11 PIN Diodes across the USA, India, Europe, Australia, and various other global locations. 1SS356TW11 PIN Diodes are a product manufactured by ROHM. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

Part No. 1SS356TW11
Manufacturer: ROHM
Category: PIN Diodes
Description: RF Diode Standard - Single 35V 100 mA 200 mW UMD2
Datasheet: 1SS356TW11 Datasheet (PDF)
Price (USD)
1: USD 0.38 ea
Line Total: USD 0.38 
Availability : 520
  
Ship by Tue. 11 Nov to Thu. 13 Nov
QtyUnit Price
1$ 0.38
10$ 0.2313
100$ 0.1404
500$ 0.0968

Availability 520
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.38
10$ 0.2313
100$ 0.1404
500$ 0.0968


Availability 5820
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1487
Multiples : 1
QtyUnit Price
1487$ 0.1748
1538$ 0.1692
2500$ 0.1578
5000$ 0.1535


Availability 2910
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1487
Multiples : 1
QtyUnit Price
1487$ 0.1748
1538$ 0.1692
2500$ 0.1578


Availability 51698
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1016
Multiples : 1
QtyUnit Price
1016$ 0.2561
1070$ 0.2431
2000$ 0.1599
6000$ 0.1513
12000$ 0.1148
24000$ 0.1074

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Reverse Current Ir
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS356TW11 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS356TW11 and other electronic components in the PIN Diodes category and beyond.

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Band Switching Diode 1SS356 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching 1.250.1 0.10.1 0.05 0.9MIN. Features 1)Ultra small mold type. (UMD2) 2)High reliability UMD2 Construction 0.70.2 Silicon epitaxial planar Structure 0.30.05 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Forward current (DC) I 100 mA F V Reverse voltage (DC) 35 V R Junction temperature 125 Tj C Storage temperature Tstg 55 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V - - 1.0 V I =10mA Forward voltage F F I Reverse current - - 10 nA V =25V R R Capacitance between terminals V =6V , f=1MHz Ct - - 1.2 pF R Forward operating resistance I =2mA , f=100MHz rf - - 0.9 F www.rohm.com 2011.08 - Rev.D 1/3 2011 ROHM Co., Ltd. All rights reserved. 1.70.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 0.8MIN. 2.80.1 2.1Data Sheet 1SS356 Ta=125 10 100 10 f=1MHz Ta=75 10 Ta=75 1 Ta=125 Ta=25 1 0.1 Ta=25 Ta= 25 1 0.1 0.01 Ta= 25 0.01 0.001 0.001 0.0001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 102030 40 50 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (V) R F REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F V -Ct CHARACTERISTICS R 850 0.1 10 Ta=25 0.09 Ta=25 f=100MHz I =10mA F V =25V R 840 0.08 n=30pcs n=30pcs 0.07 0.06 830 0.05 1 0.04 820 AVE:0.833V 0.03 AVE:0.0116nA 0.02 810 0.01 0 0.1 800 0.01 0.1 1 10 FORWARD CURRENT : I (mA) F I DISPERSION MAP V DISPERSION MAP R F rf-I CHARACTERISTICS F 5 20 1 Ta=25 0.9 Ta=25 V =6V Ifsm 1cyc R V =6V R 4 0.8 I =10mA F 15 f=1MHz RL=100 0.7 n=10pcs 8.3ms Irr=0.1*I R 3 0.6 n=10pcs 10 0.5 0.4 2 0.3 5 0.2 1 0.1 AVE:0.807pF AVE:5.60A AVE:1.20ns 0 0 0 I DISRESION MAP Ct DISPERSION MAP FSM trr DISPERSION MAP 1 10 100 Ta=25 0.9 9 f=100MHz Ifsm 8 0.8 I =2mA Ifsm F t n=10pcs 8.3ms 8.3ms 7 0.7 1cyc 0.6 6 5 0.5 10 4 0.4 3 0.3 2 0.2 1 0.1 AVE:0.602 0 1 0 110 100 0.1 1 10 100 TIME:t(ms) NUMBER OF CYCLES FORWARD CURRENT : I (mA) F I -t CHARACTERISTICS FSM I -CYCLE CHARACTERISTICS FSM rf DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.08 - Rev.D FORWARD OPERATING FORWARD OPERATING CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F RESISTANCE:rf() RESISTANCE:rf( ) TERMINALS:Ct(pF) PEAK SURGE PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F FSM FORWARD CURRENT : I (A) FSM PEAK SURGE CAPACITANCE BETWEEN REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME:trr(ns) FORWARD CURRENT : I (A) FSM TERMINALS:Ct(pF)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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