1SS356TW11 ROHM

1SS356TW11 electronic component of ROHM
1SS356TW11 ROHM
1SS356TW11 PIN Diodes
1SS356TW11  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1SS356TW11 PIN Diodes across the USA, India, Europe, Australia, and various other global locations. 1SS356TW11 PIN Diodes are a product manufactured by ROHM. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

Part No. 1SS356TW11
Manufacturer: ROHM
Category: PIN Diodes
Description: RF Diode Standard - Single 35V 100 mA 200 mW UMD2
Datasheet: 1SS356TW11 Datasheet (PDF)
Price (USD)
10: USD 0.1056 ea
Line Total: USD 1.06 
Availability : 0
  
QtyUnit Price
10$ 0.1056
100$ 0.0834
300$ 0.0542
3000$ 0.0401
6000$ 0.0357
9000$ 0.0335

Availability 535
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.38
10$ 0.2313
100$ 0.1404
500$ 0.0968
1000$ 0.0847
3000$ 0.0759
6000$ 0.0682
9000$ 0.0638
24000$ 0.0572


Availability 2910
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1698
Multiples : 1
QtyUnit Price
1698$ 0.1532
1755$ 0.1482
2500$ 0.1438


Availability 1021
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 932
Multiples : 1
QtyUnit Price
932$ 0.279


Availability 52959
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 918
Multiples : 1
QtyUnit Price
918$ 0.2834
1681$ 0.1547
2000$ 0.1443
6000$ 0.1263
12000$ 0.113
24000$ 0.111

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Reverse Current Ir
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS356TW11 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS356TW11 and other electronic components in the PIN Diodes category and beyond.

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Band Switching Diode 1SS356 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching 1.250.1 0.10.1 0.05 0.9MIN. Features 1)Ultra small mold type. (UMD2) 2)High reliability UMD2 Construction 0.70.2 Silicon epitaxial planar Structure 0.30.05 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Forward current (DC) I 100 mA F V Reverse voltage (DC) 35 V R Junction temperature 125 Tj C Storage temperature Tstg 55 to 125 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V - - 1.0 V I =10mA Forward voltage F F I Reverse current - - 10 nA V =25V R R Capacitance between terminals V =6V , f=1MHz Ct - - 1.2 pF R Forward operating resistance I =2mA , f=100MHz rf - - 0.9 F www.rohm.com 2011.08 - Rev.D 1/3 2011 ROHM Co., Ltd. All rights reserved. 1.70.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 0.8MIN. 2.80.1 2.1Data Sheet 1SS356 Ta=125 10 100 10 f=1MHz Ta=75 10 Ta=75 1 Ta=125 Ta=25 1 0.1 Ta=25 Ta= 25 1 0.1 0.01 Ta= 25 0.01 0.001 0.001 0.0001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 102030 40 50 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (V) R F REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F V -Ct CHARACTERISTICS R 850 0.1 10 Ta=25 0.09 Ta=25 f=100MHz I =10mA F V =25V R 840 0.08 n=30pcs n=30pcs 0.07 0.06 830 0.05 1 0.04 820 AVE:0.833V 0.03 AVE:0.0116nA 0.02 810 0.01 0 0.1 800 0.01 0.1 1 10 FORWARD CURRENT : I (mA) F I DISPERSION MAP V DISPERSION MAP R F rf-I CHARACTERISTICS F 5 20 1 Ta=25 0.9 Ta=25 V =6V Ifsm 1cyc R V =6V R 4 0.8 I =10mA F 15 f=1MHz RL=100 0.7 n=10pcs 8.3ms Irr=0.1*I R 3 0.6 n=10pcs 10 0.5 0.4 2 0.3 5 0.2 1 0.1 AVE:0.807pF AVE:5.60A AVE:1.20ns 0 0 0 I DISRESION MAP Ct DISPERSION MAP FSM trr DISPERSION MAP 1 10 100 Ta=25 0.9 9 f=100MHz Ifsm 8 0.8 I =2mA Ifsm F t n=10pcs 8.3ms 8.3ms 7 0.7 1cyc 0.6 6 5 0.5 10 4 0.4 3 0.3 2 0.2 1 0.1 AVE:0.602 0 1 0 110 100 0.1 1 10 100 TIME:t(ms) NUMBER OF CYCLES FORWARD CURRENT : I (mA) F I -t CHARACTERISTICS FSM I -CYCLE CHARACTERISTICS FSM rf DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.08 - Rev.D FORWARD OPERATING FORWARD OPERATING CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F RESISTANCE:rf() RESISTANCE:rf( ) TERMINALS:Ct(pF) PEAK SURGE PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F FSM FORWARD CURRENT : I (A) FSM PEAK SURGE CAPACITANCE BETWEEN REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME:trr(ns) FORWARD CURRENT : I (A) FSM TERMINALS:Ct(pF)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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