1SS380TFTE-17 ROHM

AEC-Q101 Qualified Switching Diode 1SS380TF Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching 1.250.1 0.10.1 0.05 0.9MIN. Features 1)Ultra small mold type. (UMD2) 2)High reliability UMD2 Construction 0.70.2 Silicon epitaxial planar 0.30.05 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 1.550.05 0.30.1 4.00.1 2.00.05 1.400.1 4.00.1 1.05 1.00.1 Absolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 40 V RM Reverse voltage (DC) V 35 V R Forward current I 225 mA FM Average rectified forward current Io 100 mA Surge current (t=1s) I 400 mA surge Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.2 V I =100mA F F Reverse current I - - 0.01 A V =20V R R Capacitance between terminals V =0.5V , f=1MHz Ct - - 5.0 pF R www.rohm.com 2011.08 - Rev.C 1/2 2011 ROHM Co., Ltd. All rights reserved. 1.70.1 2.50.2 3.50.05 1.750.1 0.8MIN. 2.75 8.00.2 2.80.1 2.1Data Sheet 1SS380TF 10 100 Ta=150 100 f=1MHz Ta=125 10 Ta=125 Ta=75 10 1 Ta=75 Ta=25 1 0.1 Ta=25 Ta= 25 1 Ta=150 0.01 Ta= 25 0.001 0.1 0.0001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 5 10 15 20 010 20 30 FORWARD VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R V -Ct CHARACTERISTICS R 970 200 10 Ta=25 Ta=25 Ta=25 9 I =100mA F f=1MHz V =20V R 960 n=30pcs 8 V =0V R n=30pcs 150 n=10pcs 7 950 6 5 100 940 4 3 50 930 2 AVE:940.0mV 1 AVE:3.24pF AVE:40.51pA 920 0 0 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 15 5 20 Ta=25 Ifsm 1cyc V =6V R Ifsm 4 I =10mA F 15 RL=100 8.3ms 8.3ms 8.3ms 10 Irr=0.1*I R 1cyc 3 n=10pcs 10 2 5 AVE:9.60A 5 1 AVE:1.20ns 0 0 0 110 100 I DISPERSION MAP FSM trr DISPERSION MAP NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 30 1000 30 Rth(j-a) 25 25 Ifsm t 20 100 20 Rth(j-c) 15 15 AVE:5.1kV Mounted on epoxy board AVE:3.70kV IM=1mA I =50mA 10 F 10 10 1ms time 5 5 300us C=200pF C=100pF 1 0 0 R=1.5k R=0 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 TIME:t(s) TIME:t(ms) ESD DISPERSION MAP Rth-t CHARACTERISTICS I -t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.08 - Rev.C PEAK SURGE PEAK SURGE FORWARD VOLTAGE : V (mV) F FORWARD CURRENT : I (mA) F FORWARD CURRENT : I (A) FSM FORWARD CURRENT : I (A) FSM TRANSIENT REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT: I (pA) THAERMAL IMPEDANCE : Rth ( /W) R PEAK SURGE ELECTROSTATIC CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT : I (A) DDISCHARGE TEST ESD(KV) FSM TERMINALS:Ct(pF) TERMINALS:Ct(pF)