Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G02-3 General Description 2 BR24G02-3 is a 2Kbit serial EEPROM of I C BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely Conforming to the World Standard I C BUS. All Controls Available by 2 Ports of Serial Not Recommended for Clock (SCL) and Serial Data (SDA) New Designs Other Devices than EEPROM can be Connected to the Same Port, Saving Microcontroller Port DIP-T8 TSSOP-B8 1.6V to 5.5V Single Power Source Operation Most 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm Suitable for Battery Use 1.6V to 5.5V Wide Limit of Operating Voltage, Possible FAST MODE 400KHz Operation Up to 8 Byte in Page Write Mode Bit Format 256 x 8 Self-timed Programming Cycle Low Current Consumption SOP8 TSSOP-B8M Prevention of Write Mistake 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.10mm Write (Write Protect) Function Added Prevention of Write Mistake at Low Voltage More than 1 Million Write Cycles More than 40 Years Data Retention Noise Filter Built in SCL / SDA Terminal SOP- J8M Initial Delivery State FFh TSSOP-B8J 4.90mm x 6.00mm x 1.80mm 3.00mm x 4.90mm x 1.10mm SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100170-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.009 Datasheet BR24G02-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd W 0.33 (TSSOP-B8M) Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is not lower than -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, V =1.6V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) 40 - - Years Data Retention (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage V 1.6 to 5.5 CC V Input Voltage VIN 0 to VCC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, VCC=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7V - V +1.0 V 1.7VV 5.5V IH1 CC CC CC (Note3) Input Low Voltage1 VIL1 -0.3 - +0.3VCC V 1.7VVCC5.5V Input High Voltage2 V 0.8V - V +1.0 V 1.6VV <1.7V IH2 CC CC CC (Note3) Input Low Voltage2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 CC CC Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVCC5.5V (SDA) Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VV <2.5V (SDA) OL2 OL CC Input Leakage Current ILI -1 - +1 A VIN=0 to VCC Output Leakage Current I -1 - +1 A V =0 to V (SDA) LO OUT CC V =5.5V, f =400kHz, t =5ms, CC SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write VCC=5.5V, fSCL=400kHz Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read VCC=5.5V, SDA, SCL=VCC Standby Current ISB - - 2.0 A A0, A1, A2=GND, WP=GND (Note3) When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100170-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 14 001 11.Jun.2019 Rev.009