Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G16-3 General Description 2 BR24G16-3 is a 16Kbit serial EEPROM of I C BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 16 Byte in Page Write Mode Bit Format 2K x 8bit Self-timed Programming Cycle SOP8 TSSOP-B8M Low Current Consumption 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.10mm Prevention of Write Mistake WP(Write Protect) Function added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8M TSSOP-B8J Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 3.00mm x 4.90mm x 1.10mm Initial delivery state FFh SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100200-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/35 TSZ22111 14 001 18.May.2021 Rev.011 Datasheet BR24G16-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd W 0.33 (TSSOP-B8M) Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 40 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V (Note3) Input Low Voltage1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 cc cc Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V (Note3) Input Low Voltage2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 cc cc Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current I -1 - +1 A V =0 to V LI IN cc Output Leakage Current ILO -1 - +1 A VOUT=0 to Vcc (SDA) V =5.5V, f =400kHz, t =5ms, cc SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write V =5.5V, f =400kHz cc SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND (Note3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100200-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/35 TSZ22111 15 001 18.May.2021 Rev.011