BR25G512FVT-3GE2

Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25G512-3 General Description BR25G512-3 is a 512Kbit serial EEPROM of SPI BUS interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use. UP to 128Byte in Page Write Mode. SOP8 SOP- J8 5.00mm x 6.20mm x 1.71mm For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) 4.90mm x 6.00mm x 1.65mm Self-timed Programming Cycle Low Current Consumption At Write Action (5V) : 0.7mA (Typ) At Read Action (5V) : 2.4mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action Prevention of Write Mistake TSSOP-B8 Write Prohibition at Power On 3.00mm x 6.40mm x 1.20mm Write Prohibition by Command Code (WRDI) Write Prohibition by WPB Pin Figure 1. Write Prohibition Block Setting by Status Registers (BP1, BP0) Prevention of Write Mistake at Low Voltage More than 100 years Data Retention. More than 1 Million Write Cycles. Bit Format 64K8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100740-1-2 2015 ROHM Co., Ltd. All rights reserved. 1/30 TSZ2211114001 6.Oct.2015 Rev.001Datasheet BR25G512-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC When using at Ta=25C or higher 4.5mW to be reduced per 1C. 0.45 (SOP8) Power Dissipation Pd 0.45 (SOP-J8) W When using at Ta=25C or higher 4.5mW to be reduced per 1C. When using at Ta=25C or higher 3.3mW to be reduced per 1C. 0.33 (TSSOP-B8) Storage Temperature Tstg - 65 to +150 C Operating Temperature Topr - 40 to +85 C The Max value of Terminal Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Terminal - 0.3 to Vcc+1.0 V Output Voltage Voltage is not under -1.0V. Junction temperature at the storage condition Junction temperature Tjmax 150 C Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.8V to 5.5V) Limits Parameter Unit Min Typ Max (Note1) Write Cycles 1,000,000 - - Times (Note1) Data Retention 100 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power Source Voltage Vcc 1.8 to 5.5 V Input Voltage VIN 0 to Vcc www.rohm.com TSZ02201-0R2R0G100740-1-2 2015 ROHM Co., Ltd. All rights reserved. 2/30 TSZ2211115001 6.Oct.2015 Rev.001