Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM BR25H080-2C General Description BR25H080-2C is a serial EEPROM of SPI BUS interface method. Features High speed clock action up to 10MHz (Max.) MSOP8, TSSOP-B8, SOP8, SOP-J8 Package Wait function by HOLDB terminal. Data at shipment Memory array: FFh, status register Part or whole of memory arrays settable as read only WPEN, BP1, BP0 : 0 memory area by program. More than 100 years data retention. 2.5V to 5.5V single power source action most More than 1 million write cycles. suitable AEC-Q100 Qualified. for battery use. Page write mode useful for initial value write at Package factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.0mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Address auto increment function at read operation Prevention of time mistake Write prohibition at power on. MSOP8 TSSOP-B8 Write prohibition by command code (WRDI). 2.90mm x 4.00mm x 0.90mm 3.00mm x 6.40mm x 1.20mm Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. SOP8 SOP-J8 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Page write Number of pages 32 Byte Product Number BR25H080-2C BR25H080-2C Capacity Bit Format Product Number Supply Voltage MSOP8 TSSOP-B8 SOP8 SOP-J8 8Kbit 1Kx8 BR25H080-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100100-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/32 23.Aug.2013 Rev.002 TSZ2211114001 DatasheetDatasheet BR25H080-2C Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply Voltage VCC -0.3 to +6.5 V *1 380(MSOP8) *2 410(TSSOP-B8) Permissible Dissipation Pd mW *3 560(SOP8) *4 560(SOP-J8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(*1) , 3.3mW(*2) , 4.5mW (*3,*4)to be reduced per 1 Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *5 Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C *5 Data Retention 60 Years Ta105C 50 Years Ta125C *5: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *6 Input Capacity C V =GND 8 IN IN pF *6 Output Capacity C V =GND 8 OUT OUT *6: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100100-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/32 23.Aug.2013 Rev.002 TSZ2211115001