Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM BR25H640-2C General Description BR25H640-2C is a serial EEPROM of SPI BUS interface method. Features High speed clock action up to 10MHz (Max.) TSSOP-B8, SOP8, SOP-J8 Package Wait function by HOLDB terminal. Initial delivery state: FFh, status register Part or whole of memory arrays settable as read only WPEN, BP1, BP0 : 0 memory area by program. More than 100 years data retention. 2.5V to 5.5V single power source action most More than 1 million write cycles. suitable AEC-Q100 Qualified. for battery use. Page write mode useful for initial value write at Package factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.1mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V): 0.1A (Typ.) Address auto increment function at read operation Prevention of write mistake Write prohibition at power on. TSSOP-B8 SOP8 Write prohibition by command code (WRDI). 3.00mm x 6.40mm x 1.20mm 5.00mm x 6.20mm x 1.71mm Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. SOP-J8 4.90mm x 6.00mm x 1.65mm Page write Number of pages 32 Byte Product Number BR25H640-2C BR25H640-2C Capacity Bit Format Product Number Supply Voltage TSSOP-B8 SOP8 SOP-J8 64Kbit 8Kx8 BR25H640-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100120-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/31 12.Mar.2013 Rev.001 TSZ2211114001 DatasheetDatasheet BR25H640-2C Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply Voltage VCC -0.3 to +6.5 V *1 410(TSSOP-B8) *2 Permissible Dissipation Pd 560(SOP8) mW *3 560(SOP-J8) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +125 C Input voltage/Output voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.3mW(*1) , 4.5mW (*2,*3)to be reduced per 1 Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *4 Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C *4 Data Retention 60 Years Ta105C 50 Years Ta125C *4: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *5 Input Capacity C V =GND 8 IN IN pF *5 Output Capacity C V =GND 8 OUT OUT *5: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100120-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/31 12.Mar.2013 Rev.001 TSZ2211115001