Datasheet Serial EEPROM Series Automotive EEPROM 105 Operation Microwire BUS EEPROM (3-Wire) BR93Axx-WM (1K 2K 4K 8K 16K) General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. Features Packages W(Typ.) x D(Typ.) x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Wide temperature range -40 to +105 Operations available at high speed 2MHz clock(2.5V to 5.5V) Speed write available (write time 5ms max.) Same package and pin layout from 1Kbit to 16Kbit 2.5V to 5.5V single power source operation SOP- J8 SOP8 Address auto increment function at read operation 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption TSSOP-B8 MSOP8 At write operation (at 5V) : 1.2mA (Typ.) 3.00mm x 6.40mm x 1.20mm 2.90mm x 4.00mm x 0.90mm At read operation (at 5V) : 0.3mA (Typ.) At standby condition (at 5V) : 0.1A (Typ.)(CMOS input) TTL compatible (input / output s) Data retention for 40 years(Ta25) Endurance up to 1,000,000 times(Ta25) Data at shipment all addresses FFFFh AEC-Q100 Qualified BR93Axx-WM Package type SOP8 SOP-J8 TSSOP-B8 MSOP8 Power source Capacity Bit format Type F RF FJ RFJ RFVT RFVM voltage 1Kbit 6416 BR93A46-WM 2.5V to 5.5V 2Kbit 12816 BR93A56-WM 2.5V to 5.5V 4Kbit 25616 BR93A66-WM 2.5V to 5.5V 8Kbit 51216 BR93A76-WM 2.5V to 5.5V 16Kbit 1K16 BR93A86-WM 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100150-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 6.Nov.2013 Rev.003DatasheetDatasheet BR93Axx-WM (1K 2K 4K 8K 16K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Remarks Supply voltage VCC -0.3 to +6.5 V When using at Ta=25 or higher, 4.5mW to be reduced per 1. 0.45 (SOP8) When using at Ta=25 or higher, 4.5mW to be reduced per 1. 0.45 (SOP-J8) Permissible Pd W dissipation When using at Ta=25 or higher, 3.3mW to be reduced per 1. 0.33 (TSSOP-B8) 0.31 (MSOP8) When using at Ta=25 or higher, 3.1mW to be reduced per 1. Storage temperature range Tstg -65 to +125 Operating temperature range Topr -40 to +105 Terminal voltage -0.3 to VCC+0.3 V Memory Cell Characteristics (VCC=2.5V to 5.5V) Limit Parameter Unit Condition Min. Typ. Max. 1,000,000 - - Ta25 550,000 Ta60 *1 Endurance Times 200,000 Ta85 100,000 - - Ta105 40 - - Ta25 *1 Data retention Years 10 - - Ta105 Shipment data all address FFFFh *1Not 100 TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Power source voltage VCC 2.5 to 5.5 V Input voltage VIN 0 to VCC Electrical Characteristics (Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40to +105) Limits Parameter Symbol Unit Condition Min. Typ. Max. L input voltage 1 VIL1 -0.3 - 0.8 V 4.0VVCC5.5V L input voltage 2 VIL2 -0.3 - 0.2 x VCC V VCC4.0V H input voltage 1 VIH1 2.0 - VCC+0.3 V 4.0VVCC5.5V H input voltage 2 VIH2 0.7 x VCC - VCC+0.3 V VCC4.0V L output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0VVCC5.5V L output voltage 2 VOL2 0 - 0.2 V IOL=100A H output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0VVCC5.5V H output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100A Input leak current ILI -1 - 1 A VIN=0V to VCC Output leak current ILO -1 - 1 A VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE) Current consumption ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL) Standby current ISB - - 2 A CS=0V, DO=OPEN www.rohm.com TSZ02201-0R1R0G100150-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211115001 6.Nov.2013 Rev.003