Product Information

BR93H86RFVM-2CTR

BR93H86RFVM-2CTR electronic component of ROHM

Datasheet
SERIAL EEPROM, 1.25MHZ, MSOP-8

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0299 ea
Line Total: USD 2.03

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.4548
10 : USD 0.4334
25 : USD 0.4024
50 : USD 0.4
100 : USD 0.3834

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.3731
9000 : USD 0.3731
24000 : USD 0.3695
45000 : USD 0.3634

     
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Memory Size
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Supply Voltage - Max
Minimum Operating Temperature
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Supply Current - Max
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Product Range
Msl
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Brand
Cnhts
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Mxhts
Operating Supply Voltage
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Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H86-2C GeneralDescription Package (Typ) (Typ) (Max) BR93H86-2C is a serial EEPROM of serial 3-line interface MSOP8 2.90mm x 4.00mm x 0.90mm method. TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage TSSOP-B8 MSOP8 Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High Reliability using ROHM Original Double-Cell Structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment SOP-J8 SOP8 AEC-Q100 Qualified BR93H86-2C Package Type MSOP8 TSSOP-B8 SOP8 SOP-J8 Capacity Bit Format Product Name Supply Voltage RFVM RFVT RF RFJ 16Kbit 1K16 BR93H86-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100050-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 16.Feb.2016 Rev.003DatasheetDatasheet BR93H86-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limit Unit Supply Voltage V -0.3 to +6.5 V CC 380 (MSOP8) (1) 410 (TSSOP-B8) (2) Permissible Dissipation Pd mW 560 (SOP8) (3) 560 (SOP-J8) (4) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(*1), 3.3mW(*2) , 4.5mW(*3,*4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limit Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 Write Cycles 500,000 - - Cycles Ta105 (5) 300,000 - - Cycles Ta125 100 - - Years Ta25 Data Retention 60 - - Years Ta105 (5) 50 - - Years Ta125 (5) Not 100% TESTED Recommended Operating Conditions Unit Parameter Symbol Limit Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100050-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211114001 16.Feb.2016 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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