Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM(3-Wire) BR93Lxx-W General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Actions available at high speed 2MHz clock(2.5V to 5.5V) Speed write available (write time 5ms max. Same package and pin layout from 1Kbit to 16Kbit 1.8V to 5.5V single power source action Address auto increment function at read action SOP8 TSSOP-B8 5.00mm x 6.20mm x 1.71mm Write mistake prevention function 3.00mm x 6.40mm x 1.20mm Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption SOP- J8 TSSOP-B8J At write action (at 5V) : 1.2mA (Typ.) 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm At read action (at 5V) : 0.3mA (Typ.) At standby action (at 5V) : 0.1A (Typ.)(CMOS input) TTL compatible( input / outputs) Data retention for 40 years Endurance up to 1,000,000 times Data at shipment all addresses FFFFh SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm DIP-T8 9.30mm x 6.50mm x 7.10mm Figure.1 BR93Lxx-W TSSOP- Package type SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 DIP-T8 B8J Power source Capacity Bit format Type F RF FJ RFJ FV RFV FVT RFVT RFVM RFVJ - voltage 1Kbit 64 16 BR93L46-W 1.8V to 5.5V 2Kbit 128 16 BR93L56-W 1.8V to 5.5V 4Kbit 256 16 BR93L66-W 1.8V to 5.5V 8Kbit 512 16 BR93L76-W 1.8V to 5.5V 16Kbit 1K16 BR93L86-W 1.8V to 5.5V Product structure Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100390-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/35 TSZ2211114001 08.Jan.2021 Rev.003 BR93Lxx-W Absolute Maximum Ratings (Ta=25 ) Remarks Parameter Symbol Limits Unit Impressed voltage VCC -0.3 to +6.5 V When using at Ta=25 or higher, 4.5mW, to be reduced per 1 . 450 (SOP8) When using at Ta=25 or higher, 4.5mW, to be reduced per 1 . 450 (SOP-J8) 300 (SSOP-B8) When using at Ta=25 or higher, 3.0mW, to be reduced per 1 . Permissible dissipation Pd mW 330 (TSSOP-B8) When using at Ta=25 or higher, 3.3mW, to be reduced per 1 . When using at Ta=25 or higher, 3.1mW, to be reduced per 1 . 310 (MSOP8) When using at Ta=25 or higher, 3.1mW, to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher, 8.0mW, to be reduced per 1 800(DIP-T8) Storage temperature range Tstg -65 to +125 Action temperature range Topr -40 to +85 Terminal voltage -0.3 to VCC+0.3 V Memory Cell Characteristics(VCC=1.8V to 5.5V) Limit Parameter Unit Condition Min. Typ. Max. *1 Endurance 1,000,000 - - Times Ta=25 *1 Data retention 40 - - Years Ta=25 Shipment data all address FFFFh *1Not 100 TESTED Recommended Operating Ratings Unit Parameter Symbol Limits Power source voltage VCC 1.8 to 5.5 V Input voltage VIN 0 to VCC www.rohm.com TSZ02201-0R2R0G100390-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/35 TSZ2211115001 08.Jan.2021 Rev.003