DTA014TEBTL ROHM

DTA014TEBTL electronic component of ROHM
DTA014TEBTL ROHM
DTA014TEBTL Bipolar Transistors - Pre-Biased
DTA014TEBTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTA014TEBTL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA014TEBTL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No.DTA014TEBTL
Manufacturer:ROHM
Category:Bipolar Transistors - Pre-Biased
Description:Bipolar Transistors - Pre-Biased PNP Digital Transtr w/built in resistors
Datasheet:DTA014TEBTL Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.19 ea
Line Total: USD 0.19 
Availability : 0
  
QtyUnit Price
1$ 0.19
10$ 0.1137
100$ 0.0713
500$ 0.0492
1000$ 0.0396
3000$ 0.0319
6000$ 0.0297
9000$ 0.0242
24000$ 0.0231
  

Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.19
10$ 0.1137
100$ 0.0713
500$ 0.0492
1000$ 0.0396
3000$ 0.0319
6000$ 0.0297
9000$ 0.0242
24000$ 0.0231

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Output Voltage
Brand
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the DTA014TEBTL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA014TEBTL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA014T series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C R 10k 1 DTA014TM DTA014TEB (VMT3) (EMT3F) SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 10k 1 DTA014TUB 2) Built-in bias resistors enable the configuration of (UMT3F) an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set llInner circuit for operation, making the circuit design easy. 4) Complementary NPN Types: DTC014T series llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTA014TM 1212 T2L 180 8 8000 07 (VMT3) SOT-416FL DTA014TEB 1616 TL 180 8 3000 07 (EMT3F) SOT-323FL DTA014TUB 2021 TL 180 8 3000 07 (UMT3F) www.rohm.com 1/6 20160426 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTA014T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO *1 I Collector current -100 mA C DTA014TM 150 *2 Power dissipation DTA014TEB P 150 mW D DTA014TUB 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.5mA - -70 -150 mV CE(sat) C B h DC current gain V = -10V, I = -5mA 100 - 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160426 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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