DTA113Z series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V -50V CC I -100mA C(MAX.) R 1.0k 1 DTA113ZM DTA113ZEB R (VMT3) (EMT3F) 10k 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 DTA113ZE DTA113ZUB 2) Built-in bias resistors enable the configuration of (EMT3) (UMT3F) an inverter circuit without connecting external SOT-323 SOT-346 input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC113Z series llApplication INVERTER, INTERFACE, DRIVER DTA113ZUA DTA113ZKA (UMT3) (SMT3) llInner circuit DTA113ZM/ DTA113ZEB/ DTA113ZUB DTA113ZE/ DTA113ZUA/ DTA113ZKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA113ZM SOT-723 1212 T2L 180 8 8000 E11 DTA113ZEB SOT-416FL 1616 TL 180 8 3000 E11 DTA113ZE SOT-416 1616 TL 180 8 3000 E11 DTA113ZUB SOT-323FL 2021 TL 180 8 3000 111 DTA113ZUA SOT-323 2021 T106 180 8 3000 111 DTA113ZKA SOT-346 2928 T146 180 8 3000 E11 www.rohm.com 1/10 20170609 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. DTA113Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -10 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA113ZM 150 DTA113ZEB 150 DTA113ZE 150 *2 Power dissipation P mW D DTA113ZUB 200 DTA113ZUA 200 DTA113ZKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -7.2 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2018 ROHM Co., Ltd. All rights reserved. 20170609 - Rev.001