DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified llOutline Parameter Value VMT3 EMT3 V -50V CC I -100mA C(MAX.) R 2.2k 1 DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R (SC-105AA) SOT-416(SC-75A) 2.2k 2 UMT3 SMT3 llFeatures 1) Built-In Biasing Resistors, R = R = 2.2k 1 2 2) Built-in bias resistors enable the configuration of DTA123EUAFRA DTA123EKAFRA DTA123EUA DTA123EKA an inverter circuit without connecting external SOT-323(SC-70) SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC123E series 6) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA123EMFHA DTA123EM VMT3 1212 T2L 180 8 8000 12 DTA123EEFRA DTA123EE EMT3 1616 TL 180 8 3000 12 DTA123EUAFRA DTA123EUA UMT3 2021 T106 180 8 3000 12 DTDTA123EKAFRAA123EKA SMT3 2928 T146 180 8 3000 12 www.rohm.com 1/8 20121216 - Rev.002 2012 ROHM Co., Ltd. All rights reserved. DTA123E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -12 to 10 V IN Output current I -100 mA O *1 Collector current I -100 mA C(MAX) DTA123EM 150 DTA123EMFHA DTDTA123EEFRAA123EE 150 *2 P Power dissipation mW D DTDTA123EUAFRAA123EUA 200 DTA123EKAFRA DTA123EKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3 - - I(on) O O V Output voltage I / I = -10mA / -0.5mA - -0.1 -0.3 V O(on) O I I Input current V = -5V - - -3.8 mA I I I Output current V = -50V, V = 0V - - -0.5 A O(off) CC I G DC current gain V = -5V, I = -5mA 20 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/8 2012 ROHM Co., Ltd. All rights reserved. 20121216 - Rev.002