DTA124T series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3 V -50V CEO I -100mA C R 22k 1 DTA124TM DTA124TE (SC-105AA) SOT-416(SC-75A) UMT3 SMT3 llFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA124TUA DTA124TKA an inverter circuit without connecting external SOT-323(SC-70) SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC124T series 6) Lead Free/RoHS Compliant. llApplication B: BASE Switching circuit, Inverter circuit, Interface circuit, C: COLLECTOR Driver circuit E: EMITTER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA124TM VMT3 1212 T2L 180 8 8000 95 DTA124TE EMT3 1616 TL 180 8 3000 95 DTA124TUA UMT3 2021 T106 180 8 3000 95 DTA124TKA SMT3 2928 T146 180 8 3000 95 www.rohm.com 1/7 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTA124T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA124TM 150 DTA124TE 150 *1 P Power dissipation mW D DTA124TUA 200 DTA124TKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -50V Collector cut-off current - - -0.5 A CBO CB I Emitter cut-off current V = -4V - - -0.5 A EBO EB Collector-emitter saturation voltage V I / I = -5mA / -0.5mA - - -0.3 V CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 15.4 22 28.6 k 1 V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/7 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001