DTB123TC -500mA/-40V Digital transistor (with built-in resistor) Datasheet llOutline Parameter Value SOT-23 V -40V CEO I -500mA C R 2.2k 1 (SST3) llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 2.2k 1 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTD123TC llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTB123TC 2924 T116 180 8 3000 F92 (SST3) www.rohm.com 1/4 20160222 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTB123TC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -50 V CBO V Collector-emitter voltage -40 V CEO V Emitter-base voltage -5 V EBO *1 I Collector current -500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -40 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -2.5mA - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -50mA 100 250 600 - FE CE C R Input resistance - 1.54 2.2 2.86 k 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/4 20160222 - Rev.001