DTB123YKT146 ROHM

DTB123YKT146 electronic component of ROHM
DTB123YKT146 ROHM
DTB123YKT146 Bipolar Transistors - Pre-Biased
DTB123YKT146  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTB123YKT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTB123YKT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DTB123YKT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DIGIT PNP 50V 500MA
Datasheet: DTB123YKT146 Datasheet (PDF)
Price (USD)
1: USD 0.6125 ea
Line Total: USD 0.61 
Availability : 5654
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 0.6125
10$ 0.3788
100$ 0.2231
500$ 0.165
1000$ 0.1485
3000$ 0.1309
6000$ 0.1199
9000$ 0.1078
24000$ 0.1078

Availability 5654
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6125
10$ 0.3788
100$ 0.2231
500$ 0.165
1000$ 0.1485
3000$ 0.1309
6000$ 0.1199
9000$ 0.1078
24000$ 0.1078


Availability 2746
Ship by Fri. 17 Oct to Thu. 23 Oct
MOQ : 874
Multiples : 1
QtyUnit Price
874$ 0.2884
907$ 0.278
1000$ 0.2689
2500$ 0.2509


Availability 6705
Ship by Fri. 17 Oct to Thu. 23 Oct
MOQ : 561
Multiples : 1
QtyUnit Price
561$ 0.4498
1070$ 0.2356
1150$ 0.2192
2000$ 0.2003
6000$ 0.1647

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTB123YKT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTB123YKT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTB123YK 500mA/50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-346 V -50V CC SC-59 I -500mA C R 2.2k 1 R 10k (SMT3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 DTB123YK 2928 T146 180 8 3000 F52 (SMT3) www.rohm.com 1/5 20150910 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTB123YK Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to 5 V IN *1 I Collector current -500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -2.0 - - I(on) O O V Output voltage I = -50mA, I = -2.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -3.6 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I *3 G DC current gain V = -5V, I = -50mA 56 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 3.6 4.5 5.5 - 2 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20150910 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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