DTB543E series Datasheet -500mA/-12V Low V Digital transistor (with built-in resistor) CE(sat) llOutline Parameter Value SOT-723 SOT-416 V -12V CC I -500mA C(MAX.) R 4.7k 1 DTB543EM DTB543EE R (VMT3) (EMT3) 4.7k 2 llFeatures 1)V is lower than conventional products. CE(sat) 2)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage. of almost completely eliminating parasitic effects. llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTB543EM DTB543EE llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTB543EM 1212 T2L 180 8 8000 X13 (VMT3) SOT-416 DTB543EE 1616 TL 180 8 3000 X13 (EMT3) www.rohm.com 1/6 20151029 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTB543E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -12 V CC Input voltage V -12 to 10 V IN *1 Collector current I -500 mA C(MAX) DTB543EM 150 *2 Power dissipation P mW D DTB543EE 150 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -2.5 - - I(on) O O V Output voltage I = -100mA, I = -5mA - -60 -300 mV O(on) O I I Input current V = -5V - - -1.4 mA I I I Output current V = -12V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -2V, I = -100mA 115 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151029 - Rev.002