X-On Electronics has gained recognition as a prominent supplier of DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC114GU3HZGT106 ROHM

DTC114GU3HZGT106 electronic component of ROHM
DTC114GU3HZGT106 ROHM
DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased
DTC114GU3HZGT106  Semiconductors

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Part No. DTC114GU3HZGT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC114GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting ex
Datasheet: DTC114GU3HZGT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4695 ea
Line Total: USD 2.35 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 5
Multiples : 1
5 : USD 0.4695
10 : USD 0.2957
100 : USD 0.1884
500 : USD 0.1302
1000 : USD 0.0721
5000 : USD 0.0639

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0473
9000 : USD 0.0418
45000 : USD 0.0407
99000 : USD 0.0385

   
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We are delighted to provide the DTC114GU3HZGT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC114GU3HZGT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC114GU3 HZG NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 10k (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types: DTA114GU3HZG 5) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC114GU3 HZG 2021 T106 180 8 3000 K24 (UMT3) www.rohm.com 1/4 20190128 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. DTC114GU3 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 720A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V 300 - 580 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 300 mV CE(sat) C B h DC current gain V = 5V, I =5mA 30 - - - FE CE C Emitter-base resistance R - 7 10 13 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/4 20190128 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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