X-On Electronics has gained recognition as a prominent supplier of DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC114GU3HZGT106 ROHM

Name: DTC114GU3HZGT106
Brand: ROHM
SKU: DTC114GU3HZGT106_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

DTC114GU3HZGT106 electronic component of ROHM

DTC114GU3HZGT106 Bipolar Transistors - Pre-Biased

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Part No.	DTC114GU3HZGT106
Manufacturer:	ROHM
Category:	Bipolar Transistors - Pre-Biased
Description:	Bipolar Transistors - Pre-Biased Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC114GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting ex
Datasheet:	DTC114GU3HZGT106 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.4695 ea
Line Total: USD 2.35

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

DTC114GU3HZGT106 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 04 Jul to Thu. 10 Jul MOQ : 5 Multiples : 1	5 : USD 0.4695 10 : USD 0.2957 100 : USD 0.1884 500 : USD 0.1302 1000 : USD 0.0721 5000 : USD 0.0639

0 Ship by Wed. 02 Jul to Fri. 04 Jul MOQ : 3000 Multiples : 3000	3000 : USD 0.0473 9000 : USD 0.0418 45000 : USD 0.0407 99000 : USD 0.0385

Specifications

Manufacturer ROHM ROHM
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
Packaging Cut Tape Cut Tape
Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
Factory Pack Quantity : 3000 3000

We are delighted to provide the DTC114GU3HZGT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC114GU3HZGT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC114GU3 HZG NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 10k (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types: DTA114GU3HZG 5) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC114GU3 HZG 2021 T106 180 8 3000 K24 (UMT3) www.rohm.com 1/4 20190128 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. DTC114GU3 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 720A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V 300 - 580 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 300 mV CE(sat) C B h DC current gain V = 5V, I =5mA 30 - - - FE CE C Emitter-base resistance R - 7 10 13 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/4 20190128 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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