DTC115EMT2L ROHM

DTC115E series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 50V CC I 100mA C(MAX.) R 100k 1 DTC115EM DTC115EEB R 100k (VMT3) (EMT3F) 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = R = 100k 1 2 2) Built-in bias resistors enable the configuration of DTC115EE DTC115EUB an inverter circuit without connecting external (EMT3) (UMT3F) input resistors (see inner circuit) . SOT-323 SOT-346 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA115E series llApplication INVERTER, INTERFACE, DRIVER DTC115EUA DTC115EKA (UMT3) (SMT3) llInner circuit DTC115EM/ DTC115EEB/ DTC115EUB DTC115EE/ DTC115EUA/ DTC115EKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC115EM SOT-723 1212 T2L 180 8 8000 29 DTC115EEB SOT-416FL 1616 TL 180 8 3000 29 DTC115EE SOT-416 1616 TL 180 8 3000 29 DTC115EUB SOT-323FL 2021 TL 180 8 3000 29 DTC115EUA SOT-323 2021 T106 180 8 3000 29 DTC115EKA SOT-346 2928 T146 180 8 3000 29 www.rohm.com 1/10 20160208 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC115E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -10 to 40 V IN I Output current 20 mA O *1 I Collector current 100 mA C(MAX) DTC115EM 150 DTC115EEB 150 DTC115EE 150 *2 Power dissipation P mW D DTC115EUB 200 DTC115EUA 200 DTC115EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 3.0 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 150 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 82 - - - I O O R Input resistance - 70 100 130 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land www.rohm.com 2/10 2016 ROHM Co., Ltd. All rights reserved. 20160208 - Rev.002