DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified llOutline Parameter Value VMT3 EMT3 V 50V CC I 100mA C(MAX.) R 2.2k 1 DTC123EM DTC123EE DTC123EMFHA DTC123EEFRA R (SC-105AA) SOT-416(SC-75A) 2.2k 2 UMT3 SMT3 llFeatures 1) Built-In Biasing Resistors, R = R = 2.2k 1 2 2) Built-in bias resistors enable the configuration of DTC123EUAFRA DTC123EKAFRA DTC123EUA DTC123EKA an inverter circuit without connecting external SOT-323(SC-70) SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA123E series 6) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC123EMFHA DTC123EM VMT3 1212 T2L 180 8 8000 22 DTC123EEFRA DTC123EE EMT3 1616 TL 180 8 3000 22 DTC123EUAFRA DTC123EUA UMT3 2021 T106 180 8 3000 22 DTC123EKAFRADTC123EKA SMT3 2928 T146 180 8 3000 22 www.rohm.com 1/8 20121216 - Rev.002 2012 ROHM Co., Ltd. All rights reserved. DTC123E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC Input voltage V -10 to 12 V IN Output current I 100 mA O *1 Collector current I 100 mA C(MAX) DTC123EM 150 DTC123EMFHA DTC123EEFRADTC123EE 150 *2 P Power dissipation mW D DTC123EUAFRADTC123EUA 200 DTC123EKAFRA DTC123EKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 3 - - I(on) O O V Output voltage I / I = 10mA / 0.5mA - 0.1 0.3 V O(on) O I I Input current V = 5V - - 3.8 mA I I I Output current V = 50V, V = 0V - - 0.5 A O(off) CC I G DC current gain V = 5V, I = 20mA 20 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/8 2012 ROHM Co., Ltd. All rights reserved. 20121216 - Rev.002