DTC123J series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V 50V CC I 100mA C(MAX.) R 2.2k 1 DTC123JM DTC123JEB R (SC-105AA) (SC-89) 47k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123JUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA123J series DTC123JUA DTC123JKA SOT-323(SC-70) SOT-346(SC-59) llApplication INVERTER,INTERFACE,DRIVER llInner circuit DTC123JM/ DTC123JEB/ DTC123JUB DTC123JE/ DTC123JUA/ DTC123JKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC123JM VMT3 1212 T2L 180 8 8000 E42 DTC123JEB EMT3F 1616 TL 180 8 3000 E42 DTC123JE EMT3 1616 TL 180 8 3000 E42 DTC123JUB UMT3F 2021 TL 180 8 3000 142 DTC123JUA UMT3 2021 T106 180 8 3000 142 DTC123JKA SMT3 2928 T146 180 8 3000 E42 www.rohm.com 1/10 20150311 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTC123J series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -5 to 12 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC123JM 150 DTC123JEB 150 DTC123JE 150 *2 Power dissipation P mW D DTC123JUB 200 DTC123JUA 200 DTC123JKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.1 - - I(on) O O V I / I = 5mA / 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 3.6 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 10mA 80 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 17 21 26 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20150311 - Rev.002