X-On Electronics has gained recognition as a prominent supplier of DTC124GKAT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC124GKAT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC124GKAT146 ROHM

DTC124GKAT146 electronic component of ROHM
DTC124GKAT146 ROHM
DTC124GKAT146 Bipolar Transistors - Pre-Biased
DTC124GKAT146  Semiconductors

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See Product Specifications
Part No. DTC124GKAT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN 50V 100MA
Datasheet: DTC124GKAT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0374 ea
Line Total: USD 112.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0374
9000 : USD 0.0319
24000 : USD 0.0297
45000 : USD 0.0275
99000 : USD 0.0264

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 438
Multiples : 1
438 : USD 0.5943

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 9303
Multiples : 1
9303 : USD 0.028

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 1220
Multiples : 1220
1220 : USD 0.0595

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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We are delighted to provide the DTC124GKAT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC124GKAT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC124G series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value UMT3 SMT3 V 50V CEO I 100mA C R 22k DTC124GUA DTC124GKA SOT-323(SC-70) SOT-346(SC-59) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types: DTA124G series 5) Lead Free/RoHS Compliant. B: BASE C: COLLECTOR E: EMITTER llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC124GUA UMT3 2021 T106 180 8 3000 K25 DTC124GKA SMT3 2928 T146 180 8 3000 K25 www.rohm.com 1/5 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTC124G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC124GUA 200 *1 P Power dissipation mW D DTC124GKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 330A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 0.5 A CBO CB I V = 4V Emitter cut-off current 140 - 260 A EBO EB Collector-emitter saturation voltage V I / I = 10mA / 0.5mA - - 0.3 V CE(sat) C B h V = 5V, I =5mA DC current gain 56 - - - FE CE C Emitter-base resistance R - 15.4 22 28.6 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/5 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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