DTC143X series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
V
50V
CC
I
100mA
C(MAX.)
R
4.7k
1 DTC143XM DTC143XEB
R (SC-105AA) (SC-89)
10k
2
EMT3 UMT3F
llFeatures
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
DTC143XE DTC143XUB
an inverter circuit without connecting external
SOT-416(SC-75A) (SC-85)
input resistors (see inner circuit) .
UMT3 SMT3
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary PNP Types: DTA143X series
DTC143XUA DTC143XKA
SOT-323(SC-70) SOT-346(SC-59)
llApplication
INVERTER, INTERFACE, DRIVER
llInner circuit
DTC143XM/ DTC143XEB/ DTC143XUB DTC143XE/ DTC143XUA/ DTC143XKA
llPackaging specifications
Basic
Package Taping Reel size Tape width
Part No. Package ordering Marking
size code (mm) (mm)
unit.(pcs)
DTC143XM VMT3 1212 T2L 180 8 8000 43
DTC143XEB EMT3F 1616 TL 180 8 3000 43
DTC143XE EMT3 1616 TL 180 8 3000 43
DTC143XUB UMT3F 2021 TL 180 8 3000 43
DTC143XUA UMT3 2021 T106 180 8 3000 43
DTC143XKA SMT3 2928 T146 180 8 3000 43
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1/10 20150311 - Rev.002
2015 ROHM Co., Ltd. All rights reserved.
DTC143X series
Datasheet
llAbsolute maximum ratings (T = 25C)
a
Parameter Symbol Values Unit
Supply voltage V 50 V
CC
V
Input voltage -7 to 20 V
IN
I
Output current 100 mA
O
*1
I
Collector current 100 mA
C(MAX)
DTC143XM 150
DTC143XEB 150
DTC143XE 150
*2
Power dissipation P mW
D
DTC143XUB 200
DTC143XUA 200
DTC143XKA 200
T
Junction temperature 150
j
Range of storage temperature T -55 to +150
stg
llElectrical characteristics (T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
V V = 5V, I = 100A - - 0.3
I(off)
CC O
Input voltage V
V
V = 0.3V, I = 20mA 2.5 - -
I(on)
O O
V I / I = 10mA / 0.5mA
Output voltage - 100 300 mV
O(on)
O I
I
Input current V = 5V - - 1.8 mA
I
I
I V = 50V, V = 0V
Output current - - 500 nA
O(off) CC I
G
DC current gain V = 5V, I = 10mA 30 - - -
I
O O
R
Input resistance - 3.29 4.7 6.11 k
1
R /R
Resistance ratio - 1.7 2.1 2.6 -
2 1
V = 10V, I = -5mA,
CE E
*1
f
Transition frequency - 250 - MHz
T
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
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2015 ROHM Co., Ltd. All rights reserved. 20150311 - Rev.002