DTC143XE FRA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-416 V 50V CC SC-75A I 100mA C(MAX.) R 4.7k 1 R 10k (EMT3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA143XE FRA llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 DTC143XE FRA 1616 TL 180 8 3000 43 (EMT3) www.rohm.com 1/5 20161018 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTC143XE FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -7 to 20 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V Output voltage I = 10mA, I = 0.5mA - 100 300 mV O(on) O I I V = 5V Input current - - 1.8 mA I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I G V = 5V, I = 10mA DC current gain 30 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20161018 - Rev.001