DTC143X series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V 50V CC I 100mA C(MAX.) R 4.7k 1 DTC143XM DTC143XEB R (SC-105AA) (SC-89) 10k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143XE DTC143XUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA143X series DTC143XUA DTC143XKA SOT-323(SC-70) SOT-346(SC-59) llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTC143XM/ DTC143XEB/ DTC143XUB DTC143XE/ DTC143XUA/ DTC143XKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC143XM VMT3 1212 T2L 180 8 8000 43 DTC143XEB EMT3F 1616 TL 180 8 3000 43 DTC143XE EMT3 1616 TL 180 8 3000 43 DTC143XUB UMT3F 2021 TL 180 8 3000 43 DTC143XUA UMT3 2021 T106 180 8 3000 43 DTC143XKA SMT3 2928 T146 180 8 3000 43 www.rohm.com 1/10 20150311 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTC143X series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -7 to 20 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC143XM 150 DTC143XEB 150 DTC143XE 150 *2 Power dissipation P mW D DTC143XUB 200 DTC143XUA 200 DTC143XKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V I / I = 10mA / 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 1.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 10mA 30 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20150311 - Rev.002