DTC143Z series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V 50V CC I 100mA C(MAX.) R 4.7k 1 DTC143ZM DTC143ZEB R (VMT3) (EMT3F) 47k 2 SOT-416 SOT-323FL llFeatures 1) Built-in bias resistors .R = 4.7k, R = 47k. 1 2 2) Built-in bias resistors enable the configuration of DTC143ZE DTC143ZUB an inverter circuit without connecting external (EMT3) (UMT3F) input resistors (see inner circuit) . SOT-323 SOT-346 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA143Z series llApplication INVERTER, INTERFACE, DRIVER DTC143ZUA DTC143ZKA (UMT3) (SMT3) llInner circuit DTC143ZM/ DTC143ZEB/ DTC143ZUB DTC143ZE/ DTC143ZUA/ DTC143ZKA llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) DTC143ZM SOT-723 1212 T2L 180 8 8000 E23 DTC143ZEB SOT-416FL 1616 TL 180 8 3000 E23 DTC143ZE SOT-416 1616 TL 180 8 3000 E23 DTC143ZUB SOT-323FL 2021 TL 180 8 3000 123 DTC143ZUA SOT-323 2021 T106 180 8 3000 123 DTC143ZKA SOT-346 2928 T146 180 8 3000 E23 www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 1/10 20200721 - Rev.004DTC143Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -5 to 30 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC143ZM 150 DTC143ZEB 150 DTC143ZE 150 *2 Power dissipation P mW D DTC143ZUB 200 DTC143ZUA 200 DTC143ZKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.3 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 1.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 10mA 80 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land www.rohm.com 2/10 2020 ROHM Co., Ltd. All rights reserved. 20200721 - Rev.004