DTC143Z series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
V
50V
CC
I
100mA
C(MAX.)
R
4.7k
1 DTC143ZM DTC143ZEB
R (SC-105AA) (SC-89)
47k
2
EMT3 UMT3F
llFeatures
1) Built-in bias resistors .R = 4.7k, R = 47k.
1 2
2) Built-in bias resistors enable the configuration of
DTC143ZE DTC143ZUB
an inverter circuit without connecting external
SOT-416(SC-75A) (SC-85)
input resistors (see inner circuit) .
UMT3 SMT3
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary PNP Types: DTA143Z series
DTC143ZUA DTC143ZKA
SOT-323(SC-70) SOT-346(SC-59)
llApplication
INVERTER, INTERFACE, DRIVER
llInner circuit
DTC143ZM/ DTC143ZEB/ DTC143ZUB DTC143ZE/ DTC143ZUA/ DTC143ZKA
llPackaging specifications
Basic
Package Taping Reel size Tape width
Part No. Package ordering Marking
size code (mm) (mm)
unit.(pcs)
DTC143ZM VMT3 1212 T2L 180 8 8000 E23
DTC143ZEB EMT3F 1616 TL 180 8 3000 E23
DTC143ZE EMT3 1616 TL 180 8 3000 E23
DTC143ZUB UMT3F 2021 TL 180 8 3000 123
DTC143ZUA UMT3 2021 T106 180 8 3000 123
DTC143ZKA SMT3 2928 T146 180 8 3000 E23
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20150527 - Rev.003
2015 ROHM Co., Ltd. All rights reserved.
DTC143Z series
Datasheet
llAbsolute maximum ratings (T = 25C)
a
Parameter Symbol Values Unit
Supply voltage V 50 V
CC
V
Input voltage -5 to 30 V
IN
I
Output current 100 mA
O
*1
I
Collector current 100 mA
C(MAX)
DTC143ZM 150
DTC143ZEB 150
DTC143ZE 150
*2
Power dissipation P mW
D
DTC143ZUB 200
DTC143ZUA 200
DTC143ZKA 200
T
Junction temperature 150
j
Range of storage temperature T -55 to +150
stg
llElectrical characteristics (T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
V V = 5V, I = 100A - - 0.5
I(off)
CC O
Input voltage V
V
V = 0.3V, I = 5mA 1.3 - -
I(on)
O O
V I / I = 5mA / 0.25mA
Output voltage - 100 300 mV
O(on)
O I
I
Input current V = 5V - - 1.8 mA
I
I
I V = 50V, V = 0V
Output current - - 500 nA
O(off) CC I
G
DC current gain V = 5V, I = 10mA 80 - - -
I
O O
R
Input resistance - 3.29 4.7 6.11 k
1
R /R
Resistance ratio - 8 10 12 -
2 1
V = 10V, I = -5mA,
CE E
*1
f
Transition frequency - 250 - MHz
T
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
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2015 ROHM Co., Ltd. All rights reserved. 20150527 - Rev.003